Mixed-mode circuit simulation to characterize Ga2O3 MOSFETs in different device structures

Inhwan Lee; Avinash Kumar; Ke Zeng; Uttam Singisetti; Xiu Yao

doi:10.1109/WiPDA.2017.8170544

Mixed-mode circuit simulation to characterize Ga₂O₃ MOSFETs in different device structures

Inhwan Lee
, Avinash Kumar
, Ke Zeng
, Uttam Singisetti
, Xiu Yao

Department of Electrical Engineering

SUNY Buffalo

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

19 Scopus citations

Abstract

Two gallium oxide (Ga₂O₃) MOSFETs, a non field plated (NFP) device and a field plated (FP) device, are proposed and simulated in Silvaco TCAD. The static characteristics of the devices were obtained from Silvaco TCAD and the characterization of switching performance was conducted in Silvaco mixed-mode with inductive load test circuit. To study the influence of the thickness of the field plate oxide (T_FPOX), another FP device with different T_FPOX is investigated. The simulated devices were compared with commercially available silicon carbide (SiC) MOSFETs in a three phase modular multilevel converter (MMC) to predict their performance in high power application.

Original language	English
Title of host publication	2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2017
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	185-189
Number of pages	5
ISBN (Electronic)	9781538631171
DOIs	https://doi.org/10.1109/WiPDA.2017.8170544
State	Published - Dec 7 2017
Event	5th IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2017 - Albuquerque, United States Duration: Oct 30 2017 → Nov 1 2017

Publication series

Name	2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2017
Volume	2017-December

Conference

Conference	5th IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2017
Country/Territory	United States
City	Albuquerque
Period	10/30/17 → 11/1/17

Access to Document

10.1109/WiPDA.2017.8170544

Cite this

Lee, I., Kumar, A., Zeng, K., Singisetti, U., & Yao, X. (2017). Mixed-mode circuit simulation to characterize Ga₂O₃ MOSFETs in different device structures. In 2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2017 (pp. 185-189). (2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2017; Vol. 2017-December). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/WiPDA.2017.8170544

Lee, Inhwan ; Kumar, Avinash ; Zeng, Ke et al. / Mixed-mode circuit simulation to characterize Ga₂O₃ MOSFETs in different device structures. 2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2017. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 185-189 (2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2017).

@inproceedings{c2b5a082ad0447e6a43cb8f311d24634,

title = "Mixed-mode circuit simulation to characterize Ga2O3 MOSFETs in different device structures",

abstract = "Two gallium oxide (Ga2O3) MOSFETs, a non field plated (NFP) device and a field plated (FP) device, are proposed and simulated in Silvaco TCAD. The static characteristics of the devices were obtained from Silvaco TCAD and the characterization of switching performance was conducted in Silvaco mixed-mode with inductive load test circuit. To study the influence of the thickness of the field plate oxide (TFPOX), another FP device with different TFPOX is investigated. The simulated devices were compared with commercially available silicon carbide (SiC) MOSFETs in a three phase modular multilevel converter (MMC) to predict their performance in high power application.",

author = "Inhwan Lee and Avinash Kumar and Ke Zeng and Uttam Singisetti and Xiu Yao",

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Lee, I, Kumar, A, Zeng, K, Singisetti, U & Yao, X 2017, Mixed-mode circuit simulation to characterize Ga₂O₃ MOSFETs in different device structures. in 2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2017. 2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2017, vol. 2017-December, Institute of Electrical and Electronics Engineers Inc., pp. 185-189, 5th IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2017, Albuquerque, United States, 10/30/17. https://doi.org/10.1109/WiPDA.2017.8170544

Mixed-mode circuit simulation to characterize Ga₂O₃ MOSFETs in different device structures. / Lee, Inhwan; Kumar, Avinash; Zeng, Ke et al.
2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. 185-189 (2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2017; Vol. 2017-December).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Kumar, Avinash

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AU - Singisetti, Uttam

AU - Yao, Xiu

PY - 2017/12/7

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N2 - Two gallium oxide (Ga2O3) MOSFETs, a non field plated (NFP) device and a field plated (FP) device, are proposed and simulated in Silvaco TCAD. The static characteristics of the devices were obtained from Silvaco TCAD and the characterization of switching performance was conducted in Silvaco mixed-mode with inductive load test circuit. To study the influence of the thickness of the field plate oxide (TFPOX), another FP device with different TFPOX is investigated. The simulated devices were compared with commercially available silicon carbide (SiC) MOSFETs in a three phase modular multilevel converter (MMC) to predict their performance in high power application.

AB - Two gallium oxide (Ga2O3) MOSFETs, a non field plated (NFP) device and a field plated (FP) device, are proposed and simulated in Silvaco TCAD. The static characteristics of the devices were obtained from Silvaco TCAD and the characterization of switching performance was conducted in Silvaco mixed-mode with inductive load test circuit. To study the influence of the thickness of the field plate oxide (TFPOX), another FP device with different TFPOX is investigated. The simulated devices were compared with commercially available silicon carbide (SiC) MOSFETs in a three phase modular multilevel converter (MMC) to predict their performance in high power application.

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BT - 2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2017

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Lee I, Kumar A, Zeng K, Singisetti U , Yao X. Mixed-mode circuit simulation to characterize Ga₂O₃ MOSFETs in different device structures. In 2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2017. Institute of Electrical and Electronics Engineers Inc. 2017. p. 185-189. (2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2017). doi: 10.1109/WiPDA.2017.8170544