Misfit dislocation structure at a Si/SixGe1-x strained-layer interface

Krishna Rajan; Mike Denhoff

doi:10.1063/1.339597

Misfit dislocation structure at a Si/Si_xGe_1-x strained-layer interface

Krishna Rajan
, Mike Denhoff

Department of Materials Design and Innovation

National Research Council of Canada

Research output: Contribution to journal › Article › peer-review

51 Scopus citations

Abstract

The misfit dislocation structure at a Si/Si_0.75Ge_0.25 strained-layer interface has been characterized by transmission electron microscopy. Through weak-beam imaging it is found that partial dislocation in the form of extended nodes exist in the misfit dislocation network. The density of nodes as observed by microscopy compares favorably with the estimate of the density of charged interface states derived from capacitance-voltage measurements.

Original language	English
Pages (from-to)	1710-1712
Number of pages	3
Journal	Journal of Applied Physics
Volume	62
Issue number	5
DOIs	https://doi.org/10.1063/1.339597
State	Published - 1987

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title = "Misfit dislocation structure at a Si/SixGe1-x strained-layer interface",

abstract = "The misfit dislocation structure at a Si/Si0.75Ge0.25 strained-layer interface has been characterized by transmission electron microscopy. Through weak-beam imaging it is found that partial dislocation in the form of extended nodes exist in the misfit dislocation network. The density of nodes as observed by microscopy compares favorably with the estimate of the density of charged interface states derived from capacitance-voltage measurements.",

author = "Krishna Rajan and Mike Denhoff",

year = "1987",

doi = "10.1063/1.339597",

language = "English",

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publisher = "American Institute of Physics",

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T1 - Misfit dislocation structure at a Si/SixGe1-x strained-layer interface

AU - Rajan, Krishna

AU - Denhoff, Mike

PY - 1987

Y1 - 1987

N2 - The misfit dislocation structure at a Si/Si0.75Ge0.25 strained-layer interface has been characterized by transmission electron microscopy. Through weak-beam imaging it is found that partial dislocation in the form of extended nodes exist in the misfit dislocation network. The density of nodes as observed by microscopy compares favorably with the estimate of the density of charged interface states derived from capacitance-voltage measurements.

AB - The misfit dislocation structure at a Si/Si0.75Ge0.25 strained-layer interface has been characterized by transmission electron microscopy. Through weak-beam imaging it is found that partial dislocation in the form of extended nodes exist in the misfit dislocation network. The density of nodes as observed by microscopy compares favorably with the estimate of the density of charged interface states derived from capacitance-voltage measurements.

UR - https://www.scopus.com/pages/publications/0040806718

U2 - 10.1063/1.339597

DO - 10.1063/1.339597

M3 - Article

AN - SCOPUS:0040806718

SN - 0021-8979

VL - 62

SP - 1710

EP - 1712

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 5

ER -

Misfit dislocation structure at a Si/Si_xGe_1-x strained-layer interface

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