Microwave TFTs made of MOCVD ZnO with ALD Al2O3 gate dielectric

Hongyi Mi; Jung Hun Seo; Chieh Jen Ku; Jian Shi; Xudong Wang; Yicheng Lu; Zhenqiang Ma

doi:10.1109/JEDS.2016.2516499

Microwave TFTs made of MOCVD ZnO with ALD Al₂O₃ gate dielectric

Hongyi Mi
, Jung Hun Seo
, Chieh Jen Ku
, Jian Shi
, Xudong Wang
, Yicheng Lu
, Zhenqiang Ma

Department of Materials Design and Innovation

University of Wisconsin-Madison
Rutgers - The State University of New Jersey, New Brunswick

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

In this paper, we report on the demonstration of microwave ZnO thin-film transistors (TFTs) grown by metal organic chemical vapor deposition (MOCVD) on a SiO₂/Si substrate. In order to realize the microwave performance ZnO TFTs grown by MOCVD, the inverted staggered type device structure and the high quality Al₂O₃ gate dielectric layer grown by atomic layer deposition were employed. ZnO TFTs show the depletion mode operation and exhibit an on/off drain current ratio of 6.7 × 10⁶, a peak transconductance of 124 μS, and a field-effect mobility (μFE) of 23.3 cm²/V.s, respectively. As a result of excellent dc performance, a cut-off frequency ( fτ) of 0.73 GHz and a maximum oscillation frequency ( fmax) of 2 GHz were achieved.

Original language	English
Article number	2516499
Pages (from-to)	55-59
Number of pages	5
Journal	IEEE Journal of the Electron Devices Society
Volume	4
Issue number	2
DOIs	https://doi.org/10.1109/JEDS.2016.2516499
State	Published - Mar 2016

Keywords

ALD dielectric
Microwave
ZnO TFT

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10.1109/JEDS.2016.2516499

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title = "Microwave TFTs made of MOCVD ZnO with ALD Al2O3 gate dielectric",

abstract = "In this paper, we report on the demonstration of microwave ZnO thin-film transistors (TFTs) grown by metal organic chemical vapor deposition (MOCVD) on a SiO2/Si substrate. In order to realize the microwave performance ZnO TFTs grown by MOCVD, the inverted staggered type device structure and the high quality Al2O3 gate dielectric layer grown by atomic layer deposition were employed. ZnO TFTs show the depletion mode operation and exhibit an on/off drain current ratio of 6.7 × 106, a peak transconductance of 124 μS, and a field-effect mobility (μFE) of 23.3 cm2/V.s, respectively. As a result of excellent dc performance, a cut-off frequency ( fτ) of 0.73 GHz and a maximum oscillation frequency ( fmax) of 2 GHz were achieved.",

keywords = "ALD dielectric, Microwave, ZnO TFT",

author = "Hongyi Mi and Seo, \{Jung Hun\} and Ku, \{Chieh Jen\} and Jian Shi and Xudong Wang and Yicheng Lu and Zhenqiang Ma",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.",

year = "2016",

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doi = "10.1109/JEDS.2016.2516499",

language = "English",

volume = "4",

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issn = "2168-6734",

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T1 - Microwave TFTs made of MOCVD ZnO with ALD Al2O3 gate dielectric

AU - Mi, Hongyi

AU - Seo, Jung Hun

AU - Ku, Chieh Jen

AU - Shi, Jian

AU - Wang, Xudong

AU - Lu, Yicheng

AU - Ma, Zhenqiang

PY - 2016/3

Y1 - 2016/3

N2 - In this paper, we report on the demonstration of microwave ZnO thin-film transistors (TFTs) grown by metal organic chemical vapor deposition (MOCVD) on a SiO2/Si substrate. In order to realize the microwave performance ZnO TFTs grown by MOCVD, the inverted staggered type device structure and the high quality Al2O3 gate dielectric layer grown by atomic layer deposition were employed. ZnO TFTs show the depletion mode operation and exhibit an on/off drain current ratio of 6.7 × 106, a peak transconductance of 124 μS, and a field-effect mobility (μFE) of 23.3 cm2/V.s, respectively. As a result of excellent dc performance, a cut-off frequency ( fτ) of 0.73 GHz and a maximum oscillation frequency ( fmax) of 2 GHz were achieved.

AB - In this paper, we report on the demonstration of microwave ZnO thin-film transistors (TFTs) grown by metal organic chemical vapor deposition (MOCVD) on a SiO2/Si substrate. In order to realize the microwave performance ZnO TFTs grown by MOCVD, the inverted staggered type device structure and the high quality Al2O3 gate dielectric layer grown by atomic layer deposition were employed. ZnO TFTs show the depletion mode operation and exhibit an on/off drain current ratio of 6.7 × 106, a peak transconductance of 124 μS, and a field-effect mobility (μFE) of 23.3 cm2/V.s, respectively. As a result of excellent dc performance, a cut-off frequency ( fτ) of 0.73 GHz and a maximum oscillation frequency ( fmax) of 2 GHz were achieved.

KW - ALD dielectric

KW - Microwave

KW - ZnO TFT

UR - https://www.scopus.com/pages/publications/84963811873

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DO - 10.1109/JEDS.2016.2516499

M3 - Article

AN - SCOPUS:84963811873

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SP - 55

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JO - IEEE Journal of the Electron Devices Society

JF - IEEE Journal of the Electron Devices Society

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M1 - 2516499

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Microwave TFTs made of MOCVD ZnO with ALD Al₂O₃ gate dielectric

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Keywords

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