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Microstructure of Fe film on Si grown by MOCVD

  • Nanjing University
  • SUNY Buffalo

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

Fe epitaxial films were grown on Si(100) substrate by MOCVD using thermal decomposition of iron pentacarbonyl, Fe(CO)5. X-ray diffraction and XPS spectroscopy were used to study the structure of the epitaxial film. The results indicate that single crystal Fe film and iron oxide-iron-silicon multilayer structure can be grown on Si (100) substrate. We have also discussed the relation between microstructure and MOCVD process.

Original languageEnglish
Pages (from-to)307-309
Number of pages3
JournalSuperlattices and Microstructures
Volume4
Issue number3
DOIs
StatePublished - 1988

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