Abstract
Fe epitaxial films were grown on Si(100) substrate by MOCVD using thermal decomposition of iron pentacarbonyl, Fe(CO)5. X-ray diffraction and XPS spectroscopy were used to study the structure of the epitaxial film. The results indicate that single crystal Fe film and iron oxide-iron-silicon multilayer structure can be grown on Si (100) substrate. We have also discussed the relation between microstructure and MOCVD process.
| Original language | English |
|---|---|
| Pages (from-to) | 307-309 |
| Number of pages | 3 |
| Journal | Superlattices and Microstructures |
| Volume | 4 |
| Issue number | 3 |
| DOIs | |
| State | Published - 1988 |
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