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Microstructure and dielectric properties of Ba1-xSrxTiO3 films grown on LaAlO3 substrates

  • Y. Gim
  • , T. Hudson
  • , Y. Fan
  • , C. Kwon
  • , A. T. Findikoglu
  • , B. J. Gibbons
  • , B. H. Park
  • , Q. X. Jia
  • Los Alamos National Laboratory
  • Jet Propulsion Laboratory, California Institute of Technology
  • California State University Long Beach

Research output: Contribution to journalArticlepeer-review

173 Scopus citations

Abstract

We report a systematic study of the microstructure and dielectric properties of barium strontium titanate, Ba1-xSrxTiO3, films grown by laser ablation on LaAlO3 substrates, where x=0.1-0.9 at an interval of 0.1. X-ray diffraction analysis shows that when x<0.4, the longest unit-cell axis is parallel to the plane of the substrate but perpendicular as x approaches 1. Dielectric constant versus temperature measurements show that the relative dielectric constant has a maximum value and that the peak temperatures corresponding to the maximum relative dielectric constant are about 70°C higher when x≤0.4 but similar when x>0.4, compared with the peak temperatures of the bulk Ba1-xSrxTiO3. At room temperature, the dielectric constant and tunability are relatively high when x≤0.4 but start to decrease rapidly as x increases.

Original languageEnglish
Pages (from-to)1200-1202
Number of pages3
JournalApplied Physics Letters
Volume77
Issue number8
DOIs
StatePublished - Aug 21 2000

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