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Microstructural properties of Ba0.6Sr0.4TiO 3/RuO2 multi-layers grown on MgO and YSZ by pulsed-laser deposition

  • New Mexico Institute of Mining and Technology
  • Los Alamos National Laboratory Materials Science and Technology Division

Research output: Contribution to journalArticlepeer-review

Abstract

The microstructure of Ba0.6Sr0.4TiO3 (BST)/RuO2 multi-layers grown on (100) MgO and (100) YSZ substrates, respectively, by pulsed-laser deposition (PLD) has been studied by transmission electron microscopy (TEM) and high-resolution electron microscopy (HREM). The RuO2 films deposited at 700°C adopt epitaxial relationships with both substrates. The epitaxial films on (100) MgO consist of two variants with an orientation relationship given by (110) RuO2//(100) MgO and [001] RuO2//[011] MgO. The epitaxial films on (100) YSZ contain four variants with an orientation relationship given by (200) RuO2//(100) YSZ and [011] RuO2//[001] YSZ. The BST films deposited on the RuO2 electrode are epitaxial on the (200) RuO2 films deposited on YSZ, and non-epitaxial on the (110) RuO2 films deposited on MgO. The epitaxial relationship between the BST and (200) RuO2 films can be described as (111) BST//(200) RuO2 and [11̄0] BST//[011 ] RuO2. The BST films contain at least four variants. The growth and microstructural properties of the multi-layer structures can be understood based on geometrical consideration of the crystal structures.

Original languageEnglish
Pages (from-to)965-972
Number of pages8
JournalIntegrated Ferroelectrics
Volume55
DOIs
StatePublished - 2003

Keywords

  • BST
  • Conductive RuO
  • Epitaxial growth
  • Structural properties

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