Microporous silicon as a light trapping layer for photodiodes

J. P. Zheng; P. T. Charbel; H. S. Kwok

doi:10.1149/1.1391142

Microporous silicon as a light trapping layer for photodiodes

J. P. Zheng
, P. T. Charbel
, H. S. Kwok

Department of Electrical Engineering

Florida State University
Hong Kong University of Science and Technology

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Porous silicon films with micropore structures were grown on the surface of silicon wafers by an anodization process. The microporous silicon film was found to be an excellent light trapping layer. It was demonstrated that a quantum efficiency of higher than 90% could be obtained with incident angles of 40, 80, and 58°, and for s-, p-, and randomly polarized light, respectively.

Original language	English
Pages (from-to)	338-339
Number of pages	2
Journal	Electrochemical and Solid-State Letters
Volume	3
Issue number	7
DOIs	https://doi.org/10.1149/1.1391142
State	Published - Jul 2000

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title = "Microporous silicon as a light trapping layer for photodiodes",

abstract = "Porous silicon films with micropore structures were grown on the surface of silicon wafers by an anodization process. The microporous silicon film was found to be an excellent light trapping layer. It was demonstrated that a quantum efficiency of higher than 90\% could be obtained with incident angles of 40, 80, and 58°, and for s-, p-, and randomly polarized light, respectively.",

author = "Zheng, \{J. P.\} and Charbel, \{P. T.\} and Kwok, \{H. S.\}",

year = "2000",

month = jul,

doi = "10.1149/1.1391142",

language = "English",

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pages = "338--339",

journal = "Electrochemical and Solid-State Letters",

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T1 - Microporous silicon as a light trapping layer for photodiodes

AU - Zheng, J. P.

AU - Charbel, P. T.

AU - Kwok, H. S.

PY - 2000/7

Y1 - 2000/7

N2 - Porous silicon films with micropore structures were grown on the surface of silicon wafers by an anodization process. The microporous silicon film was found to be an excellent light trapping layer. It was demonstrated that a quantum efficiency of higher than 90% could be obtained with incident angles of 40, 80, and 58°, and for s-, p-, and randomly polarized light, respectively.

AB - Porous silicon films with micropore structures were grown on the surface of silicon wafers by an anodization process. The microporous silicon film was found to be an excellent light trapping layer. It was demonstrated that a quantum efficiency of higher than 90% could be obtained with incident angles of 40, 80, and 58°, and for s-, p-, and randomly polarized light, respectively.

UR - https://www.scopus.com/pages/publications/0034228993

U2 - 10.1149/1.1391142

DO - 10.1149/1.1391142

M3 - Article

AN - SCOPUS:0034228993

SN - 1099-0062

VL - 3

SP - 338

EP - 339

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 7

ER -

Microporous silicon as a light trapping layer for photodiodes

Abstract

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