Metalorganic chemical vapor deposition of indium phosphide by pulsing precursors

W. K. Chen; J. C. Chen; L. Anthony; P. L. Liu

doi:10.1063/1.101697

Metalorganic chemical vapor deposition of indium phosphide by pulsing precursors

W. K. Chen
, J. C. Chen
, L. Anthony
, P. L. Liu

Department of Electrical Engineering

SUNY Buffalo

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

We have grown InP by supplying precursors alternately into the reactor of a metalorganic chemical vapor deposition system. Epitaxial growth has been obtained with a substrate temperature as low as 330°C. The growth process is mass transport limited in the temperature range of 420-580°C. It is kinetic controlled below 400°C. At 340°C, we have achieved monolayer growth in each cycle, i.e., atomic layer epitaxy.

Original language	English
Pages (from-to)	987-989
Number of pages	3
Journal	Applied Physics Letters
Volume	55
Issue number	10
DOIs	https://doi.org/10.1063/1.101697
State	Published - 1989

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title = "Metalorganic chemical vapor deposition of indium phosphide by pulsing precursors",

abstract = "We have grown InP by supplying precursors alternately into the reactor of a metalorganic chemical vapor deposition system. Epitaxial growth has been obtained with a substrate temperature as low as 330°C. The growth process is mass transport limited in the temperature range of 420-580°C. It is kinetic controlled below 400°C. At 340°C, we have achieved monolayer growth in each cycle, i.e., atomic layer epitaxy.",

author = "Chen, \{W. K.\} and Chen, \{J. C.\} and L. Anthony and Liu, \{P. L.\}",

year = "1989",

doi = "10.1063/1.101697",

language = "English",

volume = "55",

pages = "987--989",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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T1 - Metalorganic chemical vapor deposition of indium phosphide by pulsing precursors

AU - Chen, W. K.

AU - Chen, J. C.

AU - Anthony, L.

AU - Liu, P. L.

PY - 1989

Y1 - 1989

N2 - We have grown InP by supplying precursors alternately into the reactor of a metalorganic chemical vapor deposition system. Epitaxial growth has been obtained with a substrate temperature as low as 330°C. The growth process is mass transport limited in the temperature range of 420-580°C. It is kinetic controlled below 400°C. At 340°C, we have achieved monolayer growth in each cycle, i.e., atomic layer epitaxy.

AB - We have grown InP by supplying precursors alternately into the reactor of a metalorganic chemical vapor deposition system. Epitaxial growth has been obtained with a substrate temperature as low as 330°C. The growth process is mass transport limited in the temperature range of 420-580°C. It is kinetic controlled below 400°C. At 340°C, we have achieved monolayer growth in each cycle, i.e., atomic layer epitaxy.

UR - https://www.scopus.com/pages/publications/0343265582

U2 - 10.1063/1.101697

DO - 10.1063/1.101697

M3 - Article

AN - SCOPUS:0343265582

SN - 0003-6951

VL - 55

SP - 987

EP - 989

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

ER -

Metalorganic chemical vapor deposition of indium phosphide by pulsing precursors

Abstract

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