Metal-Semiconductor Schottky Diodes with Record-High Rectification and Conductance Using Two-Dimensional Monolayer Decoration

Simran Shahi; Maomao Liu; Hemendra Nath Jaiswal; Anindita Chakravarty; Sichen Wei; Yu Fu; Asma Ahmed; Anthony Cabanillas; Fei Yao; Huamin Li

doi:10.1109/EDTM53872.2022.9798125

Metal-Semiconductor Schottky Diodes with Record-High Rectification and Conductance Using Two-Dimensional Monolayer Decoration

Simran Shahi
, Maomao Liu
, Hemendra Nath Jaiswal
, Anindita Chakravarty
, Sichen Wei
, Yu Fu
, Asma Ahmed
, Anthony Cabanillas
, Fei Yao
, Huamin Li

SUNY Buffalo

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Two-dimensional (2D) materials are promising for next-generation energy-efficient nanoelectronics. In this work, we exploited sub-1-nm 2D monolayers ranging from semimetal to semiconductor and insulator to decorate metal-semiconductor (MS) interfaces and achieved an outstanding capacity of manipulating carrier injections through the 2D monolayers. A record-high rectification ratio (5.4×104) and conductance (2×105 S/m2) were obtained from a Ti/MoS2/p-Si/Al Schottky diode, which demonstrates the promising potential of the sub-1-nm 2D monolayers to boost the performance of various electron devices.

Original language	English
Title of host publication	6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	163-165
Number of pages	3
ISBN (Electronic)	9781665421775
DOIs	https://doi.org/10.1109/EDTM53872.2022.9798125
State	Published - 2022
Event	6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022 - Virtual, Online, Japan Duration: Mar 6 2022 → Mar 9 2022

Publication series

Name	6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022

Conference

Conference	6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022
Country/Territory	Japan
City	Virtual, Online
Period	03/6/22 → 03/9/22

Access to Document

10.1109/EDTM53872.2022.9798125

Cite this

Shahi, S., Liu, M., Jaiswal, H. N., Chakravarty, A., Wei, S., Fu, Y., Ahmed, A., Cabanillas, A., Yao, F., & Li, H. (2022). Metal-Semiconductor Schottky Diodes with Record-High Rectification and Conductance Using Two-Dimensional Monolayer Decoration. In 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022 (pp. 163-165). (6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM53872.2022.9798125

Shahi, Simran ; Liu, Maomao ; Jaiswal, Hemendra Nath et al. / Metal-Semiconductor Schottky Diodes with Record-High Rectification and Conductance Using Two-Dimensional Monolayer Decoration. 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022. Institute of Electrical and Electronics Engineers Inc., 2022. pp. 163-165 (6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022).

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title = "Metal-Semiconductor Schottky Diodes with Record-High Rectification and Conductance Using Two-Dimensional Monolayer Decoration",

abstract = "Two-dimensional (2D) materials are promising for next-generation energy-efficient nanoelectronics. In this work, we exploited sub-1-nm 2D monolayers ranging from semimetal to semiconductor and insulator to decorate metal-semiconductor (MS) interfaces and achieved an outstanding capacity of manipulating carrier injections through the 2D monolayers. A record-high rectification ratio (5.4×104) and conductance (2×105 S/m2) were obtained from a Ti/MoS2/p-Si/Al Schottky diode, which demonstrates the promising potential of the sub-1-nm 2D monolayers to boost the performance of various electron devices.",

author = "Simran Shahi and Maomao Liu and Jaiswal, \{Hemendra Nath\} and Anindita Chakravarty and Sichen Wei and Yu Fu and Asma Ahmed and Anthony Cabanillas and Fei Yao and Huamin Li",

note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022 ; Conference date: 06-03-2022 Through 09-03-2022",

year = "2022",

doi = "10.1109/EDTM53872.2022.9798125",

language = "English",

series = "6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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address = "United States",

}

Shahi, S, Liu, M, Jaiswal, HN, Chakravarty, A, Wei, S, Fu, Y, Ahmed, A, Cabanillas, A, Yao, F & Li, H 2022, Metal-Semiconductor Schottky Diodes with Record-High Rectification and Conductance Using Two-Dimensional Monolayer Decoration. in 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022. 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022, Institute of Electrical and Electronics Engineers Inc., pp. 163-165, 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022, Virtual, Online, Japan, 03/6/22. https://doi.org/10.1109/EDTM53872.2022.9798125

Metal-Semiconductor Schottky Diodes with Record-High Rectification and Conductance Using Two-Dimensional Monolayer Decoration. / Shahi, Simran; Liu, Maomao; Jaiswal, Hemendra Nath et al.
6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022. Institute of Electrical and Electronics Engineers Inc., 2022. p. 163-165 (6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Metal-Semiconductor Schottky Diodes with Record-High Rectification and Conductance Using Two-Dimensional Monolayer Decoration

AU - Shahi, Simran

AU - Liu, Maomao

AU - Jaiswal, Hemendra Nath

AU - Chakravarty, Anindita

AU - Wei, Sichen

AU - Fu, Yu

AU - Ahmed, Asma

AU - Cabanillas, Anthony

AU - Yao, Fei

AU - Li, Huamin

PY - 2022

Y1 - 2022

N2 - Two-dimensional (2D) materials are promising for next-generation energy-efficient nanoelectronics. In this work, we exploited sub-1-nm 2D monolayers ranging from semimetal to semiconductor and insulator to decorate metal-semiconductor (MS) interfaces and achieved an outstanding capacity of manipulating carrier injections through the 2D monolayers. A record-high rectification ratio (5.4×104) and conductance (2×105 S/m2) were obtained from a Ti/MoS2/p-Si/Al Schottky diode, which demonstrates the promising potential of the sub-1-nm 2D monolayers to boost the performance of various electron devices.

AB - Two-dimensional (2D) materials are promising for next-generation energy-efficient nanoelectronics. In this work, we exploited sub-1-nm 2D monolayers ranging from semimetal to semiconductor and insulator to decorate metal-semiconductor (MS) interfaces and achieved an outstanding capacity of manipulating carrier injections through the 2D monolayers. A record-high rectification ratio (5.4×104) and conductance (2×105 S/m2) were obtained from a Ti/MoS2/p-Si/Al Schottky diode, which demonstrates the promising potential of the sub-1-nm 2D monolayers to boost the performance of various electron devices.

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DO - 10.1109/EDTM53872.2022.9798125

M3 - Conference contribution

AN - SCOPUS:85133962811

T3 - 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022

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BT - 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022

PB - Institute of Electrical and Electronics Engineers Inc.

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ER -

Shahi S, Liu M, Jaiswal HN, Chakravarty A, Wei S, Fu Y et al. Metal-Semiconductor Schottky Diodes with Record-High Rectification and Conductance Using Two-Dimensional Monolayer Decoration. In 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022. Institute of Electrical and Electronics Engineers Inc. 2022. p. 163-165. (6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022). doi: 10.1109/EDTM53872.2022.9798125

Metal-Semiconductor Schottky Diodes with Record-High Rectification and Conductance Using Two-Dimensional Monolayer Decoration

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