Abstract
Perovskite photovoltaics are attractive for both terrestrial and space applications. Although terrestrial conditions require durability against stressors such as moisture and partial shading, space poses different challenges: radiation, atomic oxygen, vacuum and high-temperature operation. Here we demonstrate a silicon oxide layer that hardens perovskite photovoltaics to critical space stressors. A 1-μm-thick silicon oxide layer evaporated atop the device contacts blocks 0.05 MeV protons at fluences of 1015 cm−2 without a loss in power conversion efficiency, which results in a device lifetime increase in low Earth orbit by ×20 and in highly elliptical orbit by ×30. Silicon-oxide-protected Cs0.05(MA0.17FA0.83)0.95Pb(I0.83Br0.17)3) (MA, methylammonium; FA, formamidinium cation) and CsPbI2Br cells survive submergence in water and N,N-dimethylformamide. Furthermore, moisture tolerance of Sn-Pb and CsPbI2Br devices is boosted. Devices are also found to retain power conversion efficiencies on exposure to alpha irradiation and atomic oxygen. This barrier technology is a step towards lightweight packaging designs for both space and terrestrial applications.
| Original language | English |
|---|---|
| Pages (from-to) | 191-202 |
| Number of pages | 12 |
| Journal | Nature Energy |
| Volume | 8 |
| Issue number | 2 |
| DOIs | |
| State | Published - Feb 2023 |
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