Mechanical processes in chemical-mechanical planarization: Plasticity effects in oxide thin films

The role of plastic behavior of normally brittle oxide films in controlling materials removal mechanisms in chemical-mechanical planarization (CMP) is discussed. Particular attention is given to how material removal mechanisms are sensitive to fundamental changes in surface materials properties. It is suggested that the synergism between chemical and mechanical effects in CMP ca be framed in the context of an environmentally sensitive fracture process. The concept of "fracture" in the case of CMP, however it is argued, occurs at the nanometric or ultimately at the atomistic scale. This type of paradigm for chemical-mechanical planarization is developed through an analysis of the different types of material behavior associated with surface changes where environment and mechanical effects are coupled.