Mechanical implications of high current densities in flip chip solder joints

Hua Ye; Cemal Basaran; Douglas Hopkins

doi:10.1115/IMECE2002-33650

Mechanical implications of high current densities in flip chip solder joints

Hua Ye
, Cemal Basaran
, Douglas Hopkins

Department of Civil, Structural & Environmental Engineering

SUNY Buffalo

Research output: Contribution to conference › Paper › peer-review

Abstract

The electromigration damage in flip chip solder joints of eutectic SnPb was studied under current stressing at room temperature with the current density about 1.3×10⁴A/cm². The diameter of the solder joints was about 140□m. The mass accumulation near anode side and void nucleation near cathode were observed during current stressing. The nano-indentation test was first time done on solder joints for electromigration test. Surface marker movement was used to measure the atomic flux driven by electromigration and to calculate the product of effective charge number and diffusivity, DxZ*, of the solder at room temperature. The effective charge number can be extracted with the solder diffusivity at room temperature known.

Original language	English
Pages	477-483
Number of pages	7
DOIs	https://doi.org/10.1115/IMECE2002-33650
State	Published - 2002
Event	2002 ASME International Mechanical Engineering Congress and Exposition - New Orleans, LA, United States Duration: Nov 17 2002 → Nov 22 2002

Conference

Conference	2002 ASME International Mechanical Engineering Congress and Exposition
Country/Territory	United States
City	New Orleans, LA
Period	11/17/02 → 11/22/02

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10.1115/IMECE2002-33650

Cite this

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title = "Mechanical implications of high current densities in flip chip solder joints",

abstract = "The electromigration damage in flip chip solder joints of eutectic SnPb was studied under current stressing at room temperature with the current density about 1.3×104A/cm2. The diameter of the solder joints was about 140□m. The mass accumulation near anode side and void nucleation near cathode were observed during current stressing. The nano-indentation test was first time done on solder joints for electromigration test. Surface marker movement was used to measure the atomic flux driven by electromigration and to calculate the product of effective charge number and diffusivity, DxZ*, of the solder at room temperature. The effective charge number can be extracted with the solder diffusivity at room temperature known.",

author = "Hua Ye and Cemal Basaran and Douglas Hopkins",

year = "2002",

doi = "10.1115/IMECE2002-33650",

language = "English",

pages = "477--483",

note = "2002 ASME International Mechanical Engineering Congress and Exposition ; Conference date: 17-11-2002 Through 22-11-2002",

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T1 - Mechanical implications of high current densities in flip chip solder joints

AU - Ye, Hua

AU - Basaran, Cemal

AU - Hopkins, Douglas

PY - 2002

Y1 - 2002

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AB - The electromigration damage in flip chip solder joints of eutectic SnPb was studied under current stressing at room temperature with the current density about 1.3×104A/cm2. The diameter of the solder joints was about 140□m. The mass accumulation near anode side and void nucleation near cathode were observed during current stressing. The nano-indentation test was first time done on solder joints for electromigration test. Surface marker movement was used to measure the atomic flux driven by electromigration and to calculate the product of effective charge number and diffusivity, DxZ*, of the solder at room temperature. The effective charge number can be extracted with the solder diffusivity at room temperature known.

UR - https://www.scopus.com/pages/publications/0348232014

U2 - 10.1115/IMECE2002-33650

DO - 10.1115/IMECE2002-33650

M3 - Paper

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SP - 477

EP - 483

T2 - 2002 ASME International Mechanical Engineering Congress and Exposition

Y2 - 17 November 2002 through 22 November 2002

ER -

Mechanical implications of high current densities in flip chip solder joints

Abstract

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