Measurement of the valence band-offset in a PbSe/ZnO heterojunction by x-ray photoelectron spectroscopy

Lin Li; Jijun Qiu; Binbin Weng; Zijian Yuan; Xiaomin Li; Xiaoyan Gan; Ian R. Sellers; Zhisheng Shi

doi:10.1063/1.4773512

Measurement of the valence band-offset in a PbSe/ZnO heterojunction by x-ray photoelectron spectroscopy

Lin Li
, Jijun Qiu
, Binbin Weng
, Zijian Yuan
, Xiaomin Li
, Xiaoyan Gan
, Ian R. Sellers
, Zhisheng Shi

Department of Electrical Engineering

University of Oklahoma
Harbin Normal University
CAS - Shanghai Institute of Ceramics

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

A heterojunction of PbSe/ZnO has been grown by molecular beam epitaxy. X-ray photoelectron spectroscopy was used to directly measure the valence-band offset (VBO) of the heterojunction. The VBO, Δ E V, was determined as 2.51 ± 0.05 eV using the Pb 4p^3/2 and Zn 2p^3/2 core levels as a reference. The conduction-band offset, Δ E C, was, therefore, determined to be 0.59 ± 0.05 eV based on the above Δ E V value. This analysis indicates that the PbSe/ZnO heterojunction forms a type I (Straddling Gap) heterostructure.

Original language	English
Article number	261601
Journal	Applied Physics Letters
Volume	101
Issue number	26
DOIs	https://doi.org/10.1063/1.4773512
State	Published - Dec 24 2012

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title = "Measurement of the valence band-offset in a PbSe/ZnO heterojunction by x-ray photoelectron spectroscopy",

abstract = "A heterojunction of PbSe/ZnO has been grown by molecular beam epitaxy. X-ray photoelectron spectroscopy was used to directly measure the valence-band offset (VBO) of the heterojunction. The VBO, Δ E V, was determined as 2.51 ± 0.05 eV using the Pb 4p3/2 and Zn 2p3/2 core levels as a reference. The conduction-band offset, Δ E C, was, therefore, determined to be 0.59 ± 0.05 eV based on the above Δ E V value. This analysis indicates that the PbSe/ZnO heterojunction forms a type I (Straddling Gap) heterostructure.",

author = "Lin Li and Jijun Qiu and Binbin Weng and Zijian Yuan and Xiaomin Li and Xiaoyan Gan and Sellers, \{Ian R.\} and Zhisheng Shi",

year = "2012",

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journal = "Applied Physics Letters",

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T1 - Measurement of the valence band-offset in a PbSe/ZnO heterojunction by x-ray photoelectron spectroscopy

AU - Li, Lin

AU - Qiu, Jijun

AU - Weng, Binbin

AU - Yuan, Zijian

AU - Li, Xiaomin

AU - Gan, Xiaoyan

AU - Sellers, Ian R.

AU - Shi, Zhisheng

PY - 2012/12/24

Y1 - 2012/12/24

N2 - A heterojunction of PbSe/ZnO has been grown by molecular beam epitaxy. X-ray photoelectron spectroscopy was used to directly measure the valence-band offset (VBO) of the heterojunction. The VBO, Δ E V, was determined as 2.51 ± 0.05 eV using the Pb 4p3/2 and Zn 2p3/2 core levels as a reference. The conduction-band offset, Δ E C, was, therefore, determined to be 0.59 ± 0.05 eV based on the above Δ E V value. This analysis indicates that the PbSe/ZnO heterojunction forms a type I (Straddling Gap) heterostructure.

AB - A heterojunction of PbSe/ZnO has been grown by molecular beam epitaxy. X-ray photoelectron spectroscopy was used to directly measure the valence-band offset (VBO) of the heterojunction. The VBO, Δ E V, was determined as 2.51 ± 0.05 eV using the Pb 4p3/2 and Zn 2p3/2 core levels as a reference. The conduction-band offset, Δ E C, was, therefore, determined to be 0.59 ± 0.05 eV based on the above Δ E V value. This analysis indicates that the PbSe/ZnO heterojunction forms a type I (Straddling Gap) heterostructure.

UR - https://www.scopus.com/pages/publications/84871809483

U2 - 10.1063/1.4773512

DO - 10.1063/1.4773512

M3 - Article

AN - SCOPUS:84871809483

SN - 0003-6951

VL - 101

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 26

M1 - 261601

ER -

Measurement of the valence band-offset in a PbSe/ZnO heterojunction by x-ray photoelectron spectroscopy

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