Abstract
We explore how the transmission properties of a two-dimensional electron gas can be modified by manipulating the fringing magnetic fields that emanate from a set of patterned gates, deposited on the top surface of its heterojunction. We propose a multigate device whose conductance is shown to depend sensitively upon the relative magnetization of its gates, and which may therefore be of use as a planar magnetoresistance device, or as a memory structure.
| Original language | English |
|---|---|
| Article number | 062106 |
| Pages (from-to) | 1-3 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 86 |
| Issue number | 6 |
| DOIs | |
| State | Published - Feb 7 2005 |
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