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Magnetotransport and magnetic properties of InAs/Mn digital alloys

  • G. Acbas
  • , G. B. Kim
  • , X. Chen
  • , S. Wang
  • , M. Cheon
  • , C. J. Meining
  • , H. Luo
  • , B. D. McCombe
  • , Y. Sasaki
  • , X. Liu
  • , J. K. Furdyna
  • SUNY Buffalo
  • University of Notre Dame

Research output: Contribution to journalConference articlepeer-review

3 Scopus citations

Abstract

We have investigated the magnetic and magneto-transport properties of a systematic sequence of five InAs/Mn digital alloys grown by a combination of molecular beam epitaxy and atomic layer epitaxy. The samples consist of 30 periods of Mn fractional monolayers (ML) (0.17-0.5 ML) separated by 14 ML thick InAs spacer layers in a superlattice configuration. Four samples show n-type electrical conduction while the fifth (0.25 MLMn) is p-type. Squid magnetization measurements performed on these samples show remnant magnetization above room temperature, which is apparently related to a second phase.

Original languageEnglish
Pages (from-to)382-385
Number of pages4
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume20
Issue number3-4
DOIs
StatePublished - Jan 2004
EventProceedings of the 11th International Conference on Narrow Gap - Buffalo, NY., United States
Duration: Jun 16 2003Jun 20 2003

Keywords

  • Ferromagnetic
  • InAs/Mn digital alloys
  • Magnetotransport
  • Spintronics

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