Magnetoluminescence study of n-type modulation-doped ZnSSe quantum-well structures

We have studied the band-edge photoluminescence from two n-type modulation-doped ZnSe/(Formula presented)(Formula presented)Se single quantum-well structures with electron areal densities of 1.1×(Formula presented) and 1.9×(Formula presented)(Formula presented) in magnetic fields up to 30 T. The sharp excitonic transitions observed in undoped samples are replaced by a broad luminescence band. In a magnetic field, the luminescence spectra consist of distinct features associated with interband transitions between electrons occupying the conduction-band Landau levels and photoexcited holes. The energies of these transitions exhibit anomalies for even filling factors due to many-body effects.