Magneto-photoluminescence study of a dilute two-dimensional electron gas in GaAs AlGaAs quantum wells

We have studied the photoluminescence from GaAs AlGaAs quantum wells doped with silicon donors inside the GaAs layers. The experiments were performed at a temperature T=70K and in magnetic fields up to 8 Tesla. The photoluminescence spectra contain both excitonic lines as well as interband Landau transitions. The simultaneous observation of these features allowed us to determine the binding energy of the heavy hole exciton for four samples with well widths between 80 and 375Å.