Magneto-photoluminescence studies of manganese acceptors in GaAs/AlGaAs multiple quantum wells

A. Petrou; M. C. Smith; C. H. Perry; J. M. Worlock; J. Warnock; R. L. Aggarwal

doi:10.1016/0038-1098(85)90195-4

Magneto-photoluminescence studies of manganese acceptors in GaAs/AlGaAs multiple quantum wells

A. Petrou
, M. C. Smith
, C. H. Perry
, J. M. Worlock
, J. Warnock
, R. L. Aggarwal

Physics

Northeastern University
Telcordia Technologies
Massachusetts Institute of Technology

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

We have investigated the photoluminescence associated with residual manganese acceptors in n-type, modulation doped, GaAs/AlGaAs multiple quantum wells. In a magnetic field the luminescence breaks into discrete lines attributed to transitions between conduction band Landau levels and manganese acceptor states. The polarization of the luminescence was studied as function of magnetic field. A simple model based on the spin exchange interaction between the holes and the manganese ions successfully describes the polarization data.

Original language	English
Pages (from-to)	865-868
Number of pages	4
Journal	Solid State Communications
Volume	55
Issue number	10
DOIs	https://doi.org/10.1016/0038-1098(85)90195-4
State	Published - Sep 1985

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title = "Magneto-photoluminescence studies of manganese acceptors in GaAs/AlGaAs multiple quantum wells",

abstract = "We have investigated the photoluminescence associated with residual manganese acceptors in n-type, modulation doped, GaAs/AlGaAs multiple quantum wells. In a magnetic field the luminescence breaks into discrete lines attributed to transitions between conduction band Landau levels and manganese acceptor states. The polarization of the luminescence was studied as function of magnetic field. A simple model based on the spin exchange interaction between the holes and the manganese ions successfully describes the polarization data.",

author = "A. Petrou and Smith, \{M. C.\} and Perry, \{C. H.\} and Worlock, \{J. M.\} and J. Warnock and Aggarwal, \{R. L.\}",

year = "1985",

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language = "English",

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journal = "Solid State Communications",

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T1 - Magneto-photoluminescence studies of manganese acceptors in GaAs/AlGaAs multiple quantum wells

AU - Petrou, A.

AU - Smith, M. C.

AU - Perry, C. H.

AU - Worlock, J. M.

AU - Warnock, J.

AU - Aggarwal, R. L.

PY - 1985/9

Y1 - 1985/9

N2 - We have investigated the photoluminescence associated with residual manganese acceptors in n-type, modulation doped, GaAs/AlGaAs multiple quantum wells. In a magnetic field the luminescence breaks into discrete lines attributed to transitions between conduction band Landau levels and manganese acceptor states. The polarization of the luminescence was studied as function of magnetic field. A simple model based on the spin exchange interaction between the holes and the manganese ions successfully describes the polarization data.

AB - We have investigated the photoluminescence associated with residual manganese acceptors in n-type, modulation doped, GaAs/AlGaAs multiple quantum wells. In a magnetic field the luminescence breaks into discrete lines attributed to transitions between conduction band Landau levels and manganese acceptor states. The polarization of the luminescence was studied as function of magnetic field. A simple model based on the spin exchange interaction between the holes and the manganese ions successfully describes the polarization data.

UR - https://www.scopus.com/pages/publications/0022131837

U2 - 10.1016/0038-1098(85)90195-4

DO - 10.1016/0038-1098(85)90195-4

M3 - Article

AN - SCOPUS:0022131837

SN - 0038-1098

VL - 55

SP - 865

EP - 868

JO - Solid State Communications

JF - Solid State Communications

IS - 10

ER -

Magneto-photoluminescence studies of manganese acceptors in GaAs/AlGaAs multiple quantum wells

Abstract

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