@inproceedings{5b26a9a7273d400fa4cb97ee2c6d07b4,
title = "Magneto-electric magnetic tunnel junction based analog circuit options",
abstract = "The magneto-electric magnetic tunnel junction (ME-MTJ) is a voltage controlled beyond CMOS device based on the principle of ME anti-ferromagnetic (AFM) exchange biasing of chromia (Cr2O3) and the tunneling magnetoresistance (TMR) of a magnetic tunnel junction (fixed/free ferromagnet (FM) stack). These devices have previously been demonstrated for the implementation of digital logic and memory applications. We here demonstrate their analog capabilities with a variety of analog functions adapted specifically to the characteristics of ME-MTJ - based devices. The novel circuit options proposed in this paper includes a ME-MTJ based analog comparator and the two variations of an 8-level analog-to-digital converter (ADC) using serial and parallel ME-MTJ circuit configurations.",
keywords = "Analog-to-Digital converter (ADC), Logic, Magnetic Tunnel Junction (MTJ), Magneto-Electric Magnetic Tunnel Junction (ME-MTJ), Memory, Spintronics, Verilog-A",
author = "Nishtha Sharma and Jonathan Bird and Peter Dowben and Andrew Marshall",
note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 30th IEEE International System on Chip Conference, SOCC 2017 ; Conference date: 05-09-2017 Through 08-09-2017",
year = "2017",
month = dec,
day = "18",
doi = "10.1109/SOCC.2017.8226032",
language = "English",
series = "International System on Chip Conference",
publisher = "IEEE Computer Society",
pages = "179--183",
editor = "Jurgen Becker and Ramalingam Sridhar and Hai Li and Ulf Schlichtmann and Massimo Alioto",
booktitle = "Proceedings - 30th IEEE International System on Chip Conference, SOCC 2017",
address = "United States",
}