@inproceedings{c96c197c56f949d484feb3207a87e5c8,
title = "Magneto-electric magnetic tunnel junction as process adder for non-volatile memory applications",
abstract = "Magneto-electric magnetic tunnel junction devices (ME-MTJ) show promise for beyond-CMOS memory applications. The advantages of these devices include non-volatility, easy integration with CMOS processing, high-density, low power consumption and high-speed operation. We discuss circuitry that allows the ME-MTJ devices to interface with SRAM memory, to create non-volatile storage elements. Various layouts are suggested for the circuit configurations, showing flexible integration in an efficient manner.",
keywords = "adder, circuit, CMOS, emerging technology, logic, magnetism, memory, Spintronics",
author = "Nishtha Sharma and Andrew Marshall and Jonathan Bird and Peter Dowben",
note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 11th IEEE Dallas Circuits and Systems Conference, DCAS 2015 ; Conference date: 12-10-2015 Through 13-10-2015",
year = "2015",
month = dec,
day = "14",
doi = "10.1109/DCAS.2015.7356588",
language = "English",
series = "2015 IEEE Dallas Circuits and Systems Conference: Enabling Technologies for a Connected World, DCAS 2015",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2015 IEEE Dallas Circuits and Systems Conference",
address = "United States",
}