Abstract
We study the magneto-resistance of a V-grooved GaAs quantum-wire field-effect transistor (QWR-FET) realized by selective growth of metalorganic vapor phase epitaxy. At low temperatures, the magneto-resistance of the wire shows reproducible fluctuations resulting from the quantum interference of electrons in the wire. The gate-voltage and temperature dependence of the conductance fluctuations are studied, and the latter reveal evidence for the robust phase coherence of electrons in the V-grooved QWR.
| Original language | English |
|---|---|
| Pages (from-to) | 102-106 |
| Number of pages | 5 |
| Journal | Physica E: Low-Dimensional Systems and Nanostructures |
| Volume | 19 |
| Issue number | 1-2 |
| DOIs | |
| State | Published - Jul 2003 |
| Event | Fourth International Symposium on Nanostructures and Mesoscopi - Tempe, AZ, United States Duration: Feb 17 2003 → Feb 21 2003 |
Keywords
- Conductance fluctuations
- Low-dimensional structures
- Magneto-resistance
- Metalorganic vapor phase epitaxy
- Nanostructures
- Selective epitaxy
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