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Magneto-conductance fluctuations in a V-grooved GaAs quantum-wire

  • T. Sugaya
  • , C. K. Hahn
  • , M. Ogura
  • , A. Sato
  • , J. P. Bird
  • , D. K. Ferry
  • National Institute of Advanced Industrial Science and Technology
  • Arizona State University

Research output: Contribution to journalConference articlepeer-review

2 Scopus citations

Abstract

We study the magneto-resistance of a V-grooved GaAs quantum-wire field-effect transistor (QWR-FET) realized by selective growth of metalorganic vapor phase epitaxy. At low temperatures, the magneto-resistance of the wire shows reproducible fluctuations resulting from the quantum interference of electrons in the wire. The gate-voltage and temperature dependence of the conductance fluctuations are studied, and the latter reveal evidence for the robust phase coherence of electrons in the V-grooved QWR.

Original languageEnglish
Pages (from-to)102-106
Number of pages5
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume19
Issue number1-2
DOIs
StatePublished - Jul 2003
EventFourth International Symposium on Nanostructures and Mesoscopi - Tempe, AZ, United States
Duration: Feb 17 2003Feb 21 2003

Keywords

  • Conductance fluctuations
  • Low-dimensional structures
  • Magneto-resistance
  • Metalorganic vapor phase epitaxy
  • Nanostructures
  • Selective epitaxy

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