Magnetic field induced metal-insulator transitions in modulationdoped multiple-quantum-well structures

Y. J. Wang; B. D. McCombe; W. Schaff

doi:10.1016/0039-6028(92)90405-U

Magnetic field induced metal-insulator transitions in modulationdoped multiple-quantum-well structures

Y. J. Wang
, B. D. McCombe
, W. Schaff

Physics

SUNY Buffalo
Cornell University

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

The evolution from impurity band conduction, both insulating and metallic, to a "truly metallic" state has been realized by varying magnetic fields applied to a set of 240 Å/240 Å modulation-doped (Si) GaAs/AlGaAs multiple-quantum-well structures. The transitions were studied with a combination of far infrared magneto-transmission and electrical transport (R_xx and R_xy) measurements at magnetic fields up to 9 T and at temperatures between 1.5 and 30 K.

Original language	English
Pages (from-to)	547-548
Number of pages	2
Journal	Surface Science
Volume	263
Issue number	1-3
DOIs	https://doi.org/10.1016/0039-6028(92)90405-U
State	Published - Feb 19 1992

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title = "Magnetic field induced metal-insulator transitions in modulationdoped multiple-quantum-well structures",

abstract = "The evolution from impurity band conduction, both insulating and metallic, to a {"}truly metallic{"} state has been realized by varying magnetic fields applied to a set of 240 {\AA}/240 {\AA} modulation-doped (Si) GaAs/AlGaAs multiple-quantum-well structures. The transitions were studied with a combination of far infrared magneto-transmission and electrical transport (Rxx and Rxy) measurements at magnetic fields up to 9 T and at temperatures between 1.5 and 30 K.",

author = "Wang, \{Y. J.\} and McCombe, \{B. D.\} and W. Schaff",

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T1 - Magnetic field induced metal-insulator transitions in modulationdoped multiple-quantum-well structures

AU - Wang, Y. J.

AU - McCombe, B. D.

AU - Schaff, W.

PY - 1992/2/19

Y1 - 1992/2/19

N2 - The evolution from impurity band conduction, both insulating and metallic, to a "truly metallic" state has been realized by varying magnetic fields applied to a set of 240 Å/240 Å modulation-doped (Si) GaAs/AlGaAs multiple-quantum-well structures. The transitions were studied with a combination of far infrared magneto-transmission and electrical transport (Rxx and Rxy) measurements at magnetic fields up to 9 T and at temperatures between 1.5 and 30 K.

AB - The evolution from impurity band conduction, both insulating and metallic, to a "truly metallic" state has been realized by varying magnetic fields applied to a set of 240 Å/240 Å modulation-doped (Si) GaAs/AlGaAs multiple-quantum-well structures. The transitions were studied with a combination of far infrared magneto-transmission and electrical transport (Rxx and Rxy) measurements at magnetic fields up to 9 T and at temperatures between 1.5 and 30 K.

UR - https://www.scopus.com/pages/publications/0026819268

U2 - 10.1016/0039-6028(92)90405-U

DO - 10.1016/0039-6028(92)90405-U

M3 - Article

AN - SCOPUS:0026819268

SN - 0039-6028

VL - 263

SP - 547

EP - 548

JO - Surface Science

JF - Surface Science

IS - 1-3

ER -

Magnetic field induced metal-insulator transitions in modulationdoped multiple-quantum-well structures

Abstract

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