Abstract
We study quantum interference effects which are observed in the low temperature magnetoresistance of corrugated-gate wires fabricated in the GaAs/AlGaAs modulation-doped heterostructure system. Negative magnetoresistance, which appears over a large range of magnetic field, is observed. In addition, small oscillations in the magnetoresistance are observed. We believe these results are caused by boundary (or geometry-induced) scattering, within the gated wire, which evolves as the nature of the system changes from a quantum-dot array to a wire with weak modulation.
| Original language | English |
|---|---|
| Pages (from-to) | 317-322 |
| Number of pages | 6 |
| Journal | Superlattices and Microstructures |
| Volume | 20 |
| Issue number | 3 |
| DOIs | |
| State | Published - Oct 1996 |
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