Low-temperature heteroepitaxial growth of InSb on CdTe by metalorganic chemical vapor deposition

We report the low-temperature metalorganic chemical vapor deposition of InSb on (001)CdTe. This low-temperature process was carried out by a precracking technique. Epitaxial growth with a substrate temperature as low as 185°C can be obtained using a simple two-stage heater. The deposited films were examined by double-crystal x-ray diffraction, scanning electron microscope, and energy dispersive analysis of x ray. The films grown at 240°C are stoichiometric, single crystal, and of specular surface morphology.