Low resistivity indium tin oxide films by pulsed laser deposition

J. P. Zheng; H. S. Kwok

doi:10.1063/1.109736

Low resistivity indium tin oxide films by pulsed laser deposition

J. P. Zheng
, H. S. Kwok

Department of Electrical Engineering

SUNY Buffalo

Research output: Contribution to journal › Article › peer-review

124 Scopus citations

Abstract

Indium tin oxide films were grown by pulsed laser deposition on glass substrates. The electrical and optical properties of these films were studied. At optimized oxygen pressures, films with resistivity values of 1.4×10^-4 and 5.6×10^-4 Ω cm were deposited at substrate temperatures of 310 and 20°C, respectively. Films with a thickness of 180 nm had a transmission of nearly 100% for the wavelength range of 600-800 nm.

Original language	English
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	63
Issue number	1
DOIs	https://doi.org/10.1063/1.109736
State	Published - 1993

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title = "Low resistivity indium tin oxide films by pulsed laser deposition",

abstract = "Indium tin oxide films were grown by pulsed laser deposition on glass substrates. The electrical and optical properties of these films were studied. At optimized oxygen pressures, films with resistivity values of 1.4×10-4 and 5.6×10-4 Ω cm were deposited at substrate temperatures of 310 and 20°C, respectively. Films with a thickness of 180 nm had a transmission of nearly 100\% for the wavelength range of 600-800 nm.",

author = "Zheng, \{J. P.\} and Kwok, \{H. S.\}",

year = "1993",

doi = "10.1063/1.109736",

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journal = "Applied Physics Letters",

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AU - Zheng, J. P.

AU - Kwok, H. S.

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N2 - Indium tin oxide films were grown by pulsed laser deposition on glass substrates. The electrical and optical properties of these films were studied. At optimized oxygen pressures, films with resistivity values of 1.4×10-4 and 5.6×10-4 Ω cm were deposited at substrate temperatures of 310 and 20°C, respectively. Films with a thickness of 180 nm had a transmission of nearly 100% for the wavelength range of 600-800 nm.

AB - Indium tin oxide films were grown by pulsed laser deposition on glass substrates. The electrical and optical properties of these films were studied. At optimized oxygen pressures, films with resistivity values of 1.4×10-4 and 5.6×10-4 Ω cm were deposited at substrate temperatures of 310 and 20°C, respectively. Films with a thickness of 180 nm had a transmission of nearly 100% for the wavelength range of 600-800 nm.

UR - https://www.scopus.com/pages/publications/21544433576

U2 - 10.1063/1.109736

DO - 10.1063/1.109736

M3 - Article

AN - SCOPUS:21544433576

SN - 0003-6951

VL - 63

SP - 1

EP - 3

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 1

ER -

Low resistivity indium tin oxide films by pulsed laser deposition

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