LOW-NOISE GaAs AVALANCHE PHOTODIODES: A NEW DEVICE STRUCTURE.

F. S. Choa; P. L. Liu

LOW-NOISE GaAs AVALANCHE PHOTODIODES: A NEW DEVICE STRUCTURE.

F. S. Choa
, P. L. Liu

Department of Electrical Engineering

SUNY Buffalo

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The device is composed of a series of p-n junction avalanche regions separated by undoped drift regions. The length and doping profile are chosen so that (1) the built-in potential of each p-n is nearly equal to but always less than the energy gap E//g, and therefore, tunneling does not take place; and (2) the total length of each p-n junction is nearly equal to its depletion region. Therefore, any applied reverse bias cannot further increase the built-in potential. Instead a voltage drop is uniformly distributed on the whole semiconductor. By spatially confining the avalanche regions' abrupt junctions, the noise due to the randomness in the number of impact ionizations per carrier transit is reduced.

Original language	English
Title of host publication	Unknown Host Publication Title
Publisher	Optical Soc of America
Pages	122
Number of pages	1
ISBN (Print)	0936659416
State	Published - 1987

Cite this

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title = "LOW-NOISE GaAs AVALANCHE PHOTODIODES: A NEW DEVICE STRUCTURE.",

abstract = "The device is composed of a series of p-n junction avalanche regions separated by undoped drift regions. The length and doping profile are chosen so that (1) the built-in potential of each p-n is nearly equal to but always less than the energy gap E//g, and therefore, tunneling does not take place; and (2) the total length of each p-n junction is nearly equal to its depletion region. Therefore, any applied reverse bias cannot further increase the built-in potential. Instead a voltage drop is uniformly distributed on the whole semiconductor. By spatially confining the avalanche regions' abrupt junctions, the noise due to the randomness in the number of impact ionizations per carrier transit is reduced.",

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N2 - The device is composed of a series of p-n junction avalanche regions separated by undoped drift regions. The length and doping profile are chosen so that (1) the built-in potential of each p-n is nearly equal to but always less than the energy gap E//g, and therefore, tunneling does not take place; and (2) the total length of each p-n junction is nearly equal to its depletion region. Therefore, any applied reverse bias cannot further increase the built-in potential. Instead a voltage drop is uniformly distributed on the whole semiconductor. By spatially confining the avalanche regions' abrupt junctions, the noise due to the randomness in the number of impact ionizations per carrier transit is reduced.

AB - The device is composed of a series of p-n junction avalanche regions separated by undoped drift regions. The length and doping profile are chosen so that (1) the built-in potential of each p-n is nearly equal to but always less than the energy gap E//g, and therefore, tunneling does not take place; and (2) the total length of each p-n junction is nearly equal to its depletion region. Therefore, any applied reverse bias cannot further increase the built-in potential. Instead a voltage drop is uniformly distributed on the whole semiconductor. By spatially confining the avalanche regions' abrupt junctions, the noise due to the randomness in the number of impact ionizations per carrier transit is reduced.

UR - https://www.scopus.com/pages/publications/0023272918

M3 - Conference contribution

AN - SCOPUS:0023272918

SN - 0936659416

SP - 122

BT - Unknown Host Publication Title

PB - Optical Soc of America

ER -

LOW-NOISE GaAs AVALANCHE PHOTODIODES: A NEW DEVICE STRUCTURE.

Abstract

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