Low-field and high-field transport in β-Ga₂O₃

This chapter focuses on providing some essential concepts and insights on the theoretical understanding of low-field and high-field electron transport properties in β-Ga₂O₃. The computational framework used for this is a combination of density functional theory-based electronic structure, lattice dynamics, and electron-phonon interactions with Boltzmann theory-based transport calculations incorporating the microscopic details of the interactions. Temperature and carrier concentration dependence of electron mobility are predicted taking into account essential features such as plasmon-phonon coupling and dynamic screening. Anisotropy of the electron transport is traced from the microscopic details of electron-phonon interaction. High-field transport is studied using Monte Carlo simulation and velocity-field curves are provided along different directions.