Low Cost Panel-Based 1-2 Micron RDL Technologies with Lower Resistance than Si BEOL for Large Packages

Fuhan Liu; Hirokazu Ito; Rui Zhang; Bartlet H. Deprospo; Fabian Benthaus; Hisanori Akimaru; Kouichi Hasegawa; Venky Sundaram; Rao R. Tummala

doi:10.1109/ECTC.2018.00097

Low Cost Panel-Based 1-2 Micron RDL Technologies with Lower Resistance than Si BEOL for Large Packages

Fuhan Liu
, Hirokazu Ito
, Rui Zhang
, Bartlet H. Deprospo
, Fabian Benthaus
, Hisanori Akimaru
, Kouichi Hasegawa
, Venky Sundaram
, Rao R. Tummala

Department of Electrical Engineering

Georgia Institute of Technology
JSR Corporation

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

7 Scopus citations

Abstract

This paper presents the latest lithographic advances to enable scaling of packaging redistribution layer (RDL) feature size towards 1-2 μm line and space on panel-based glass substrates. Critical dimension (CD) of 1 μm line and space with aspect ratio (AR) of 5 was demonstrated in a newly developed chemically amplified plating photoresist by using i-line contact mask aligners and low numerical aperture (NA) 1x projection steppers. The minimum line and space demonstrated was 0.9 μm with AR of 5.5. Such high AR package RDL has much lower trace resistance compared to silicon back-end-of-line (BEOL) RDL, enabling power-efficient higher bandwidth. The relationship between resolution (R) and depth-of-focus (DOF) for low NA projection stepper is discussed. Low cost, low NA, large field steppers are better suited to large panel and large size package fabrication. A cost-effective mechanical fly-cut process was implemented for planarization of the entire wafer or panel with < 1 μm flatness that ensures the success of 1 μm with AR of 5 lithography by using low cost lithographic tools.

Original language	English
Title of host publication	Proceedings - IEEE 68th Electronic Components and Technology Conference, ECTC 2018
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	613-618
Number of pages	6
ISBN (Print)	9781538649985
DOIs	https://doi.org/10.1109/ECTC.2018.00097
State	Published - Aug 7 2018
Event	68th IEEE Electronic Components and Technology Conference, ECTC 2018 - San Diego, United States Duration: May 29 2018 → Jun 1 2018

Publication series

Name	Proceedings - Electronic Components and Technology Conference
Volume	2018-May
ISSN (Print)	0569-5503

Conference

Conference	68th IEEE Electronic Components and Technology Conference, ECTC 2018
Country/Territory	United States
City	San Diego
Period	05/29/18 → 06/1/18

Keywords

1 μm line and space
Fly-cut
IO density
Panel level packaging
Photolithography
RDL

Access to Document

10.1109/ECTC.2018.00097

Cite this

Liu, F., Ito, H., Zhang, R., Deprospo, B. H., Benthaus, F., Akimaru, H., Hasegawa, K., Sundaram, V., & Tummala, R. R. (2018). Low Cost Panel-Based 1-2 Micron RDL Technologies with Lower Resistance than Si BEOL for Large Packages. In Proceedings - IEEE 68th Electronic Components and Technology Conference, ECTC 2018 (pp. 613-618). Article 8429610 (Proceedings - Electronic Components and Technology Conference; Vol. 2018-May). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ECTC.2018.00097

Liu, Fuhan ; Ito, Hirokazu ; Zhang, Rui et al. / Low Cost Panel-Based 1-2 Micron RDL Technologies with Lower Resistance than Si BEOL for Large Packages. Proceedings - IEEE 68th Electronic Components and Technology Conference, ECTC 2018. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 613-618 (Proceedings - Electronic Components and Technology Conference).

@inproceedings{2c7b6851b11341d39a36618ce300507b,

title = "Low Cost Panel-Based 1-2 Micron RDL Technologies with Lower Resistance than Si BEOL for Large Packages",

abstract = "This paper presents the latest lithographic advances to enable scaling of packaging redistribution layer (RDL) feature size towards 1-2 μm line and space on panel-based glass substrates. Critical dimension (CD) of 1 μm line and space with aspect ratio (AR) of 5 was demonstrated in a newly developed chemically amplified plating photoresist by using i-line contact mask aligners and low numerical aperture (NA) 1x projection steppers. The minimum line and space demonstrated was 0.9 μm with AR of 5.5. Such high AR package RDL has much lower trace resistance compared to silicon back-end-of-line (BEOL) RDL, enabling power-efficient higher bandwidth. The relationship between resolution (R) and depth-of-focus (DOF) for low NA projection stepper is discussed. Low cost, low NA, large field steppers are better suited to large panel and large size package fabrication. A cost-effective mechanical fly-cut process was implemented for planarization of the entire wafer or panel with < 1 μm flatness that ensures the success of 1 μm with AR of 5 lithography by using low cost lithographic tools.",

keywords = "1 μm line and space, Fly-cut, IO density, Panel level packaging, Photolithography, RDL",

author = "Fuhan Liu and Hirokazu Ito and Rui Zhang and Deprospo, \{Bartlet H.\} and Fabian Benthaus and Hisanori Akimaru and Kouichi Hasegawa and Venky Sundaram and Tummala, \{Rao R.\}",

note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 68th IEEE Electronic Components and Technology Conference, ECTC 2018 ; Conference date: 29-05-2018 Through 01-06-2018",

year = "2018",

month = aug,

day = "7",

doi = "10.1109/ECTC.2018.00097",

language = "English",

isbn = "9781538649985",

series = "Proceedings - Electronic Components and Technology Conference",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "613--618",

booktitle = "Proceedings - IEEE 68th Electronic Components and Technology Conference, ECTC 2018",

address = "United States",

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Liu, F, Ito, H, Zhang, R, Deprospo, BH, Benthaus, F, Akimaru, H, Hasegawa, K, Sundaram, V & Tummala, RR 2018, Low Cost Panel-Based 1-2 Micron RDL Technologies with Lower Resistance than Si BEOL for Large Packages. in Proceedings - IEEE 68th Electronic Components and Technology Conference, ECTC 2018., 8429610, Proceedings - Electronic Components and Technology Conference, vol. 2018-May, Institute of Electrical and Electronics Engineers Inc., pp. 613-618, 68th IEEE Electronic Components and Technology Conference, ECTC 2018, San Diego, United States, 05/29/18. https://doi.org/10.1109/ECTC.2018.00097

Low Cost Panel-Based 1-2 Micron RDL Technologies with Lower Resistance than Si BEOL for Large Packages. / Liu, Fuhan; Ito, Hirokazu; Zhang, Rui et al.
Proceedings - IEEE 68th Electronic Components and Technology Conference, ECTC 2018. Institute of Electrical and Electronics Engineers Inc., 2018. p. 613-618 8429610 (Proceedings - Electronic Components and Technology Conference; Vol. 2018-May).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Low Cost Panel-Based 1-2 Micron RDL Technologies with Lower Resistance than Si BEOL for Large Packages

AU - Liu, Fuhan

AU - Ito, Hirokazu

AU - Zhang, Rui

AU - Deprospo, Bartlet H.

AU - Benthaus, Fabian

AU - Akimaru, Hisanori

AU - Hasegawa, Kouichi

AU - Sundaram, Venky

AU - Tummala, Rao R.

PY - 2018/8/7

Y1 - 2018/8/7

N2 - This paper presents the latest lithographic advances to enable scaling of packaging redistribution layer (RDL) feature size towards 1-2 μm line and space on panel-based glass substrates. Critical dimension (CD) of 1 μm line and space with aspect ratio (AR) of 5 was demonstrated in a newly developed chemically amplified plating photoresist by using i-line contact mask aligners and low numerical aperture (NA) 1x projection steppers. The minimum line and space demonstrated was 0.9 μm with AR of 5.5. Such high AR package RDL has much lower trace resistance compared to silicon back-end-of-line (BEOL) RDL, enabling power-efficient higher bandwidth. The relationship between resolution (R) and depth-of-focus (DOF) for low NA projection stepper is discussed. Low cost, low NA, large field steppers are better suited to large panel and large size package fabrication. A cost-effective mechanical fly-cut process was implemented for planarization of the entire wafer or panel with < 1 μm flatness that ensures the success of 1 μm with AR of 5 lithography by using low cost lithographic tools.

AB - This paper presents the latest lithographic advances to enable scaling of packaging redistribution layer (RDL) feature size towards 1-2 μm line and space on panel-based glass substrates. Critical dimension (CD) of 1 μm line and space with aspect ratio (AR) of 5 was demonstrated in a newly developed chemically amplified plating photoresist by using i-line contact mask aligners and low numerical aperture (NA) 1x projection steppers. The minimum line and space demonstrated was 0.9 μm with AR of 5.5. Such high AR package RDL has much lower trace resistance compared to silicon back-end-of-line (BEOL) RDL, enabling power-efficient higher bandwidth. The relationship between resolution (R) and depth-of-focus (DOF) for low NA projection stepper is discussed. Low cost, low NA, large field steppers are better suited to large panel and large size package fabrication. A cost-effective mechanical fly-cut process was implemented for planarization of the entire wafer or panel with < 1 μm flatness that ensures the success of 1 μm with AR of 5 lithography by using low cost lithographic tools.

KW - 1 μm line and space

KW - Fly-cut

KW - IO density

KW - Panel level packaging

KW - Photolithography

KW - RDL

UR - https://www.scopus.com/pages/publications/85051968587

U2 - 10.1109/ECTC.2018.00097

DO - 10.1109/ECTC.2018.00097

M3 - Conference contribution

AN - SCOPUS:85051968587

SN - 9781538649985

T3 - Proceedings - Electronic Components and Technology Conference

SP - 613

EP - 618

BT - Proceedings - IEEE 68th Electronic Components and Technology Conference, ECTC 2018

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 68th IEEE Electronic Components and Technology Conference, ECTC 2018

Y2 - 29 May 2018 through 1 June 2018

ER -

Liu F, Ito H, Zhang R, Deprospo BH, Benthaus F, Akimaru H et al. Low Cost Panel-Based 1-2 Micron RDL Technologies with Lower Resistance than Si BEOL for Large Packages. In Proceedings - IEEE 68th Electronic Components and Technology Conference, ECTC 2018. Institute of Electrical and Electronics Engineers Inc. 2018. p. 613-618. 8429610. (Proceedings - Electronic Components and Technology Conference). doi: 10.1109/ECTC.2018.00097

Low Cost Panel-Based 1-2 Micron RDL Technologies with Lower Resistance than Si BEOL for Large Packages

Abstract

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Keywords

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