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Low bias electron scattering in structure-identified single wall carbon nanotubes: Role of substrate polar phonons

  • Bhupesh Chandra
  • , Vasili Perebeinos
  • , Stéphane Berciaud
  • , Jyoti Katoch
  • , Masa Ishigami
  • , Philip Kim
  • , Tony F. Heinz
  • , James Hone
  • Columbia University
  • IBM
  • Université de Strasbourg
  • University of Central Florida

Research output: Contribution to journalArticlepeer-review

17 Scopus citations

Abstract

We have performed temperature-dependent electrical transport measurements on known structure single wall carbon nanotubes at low bias. The experiments show a superlinear increase in nanotube resistivity with temperature, which is in contradiction with the linear dependence expected from nanotube acoustic-phonon scattering. The measured electron mean free path is also much lower than expected, especially at medium to high temperatures (>100K). A theoretical model that includes scattering due to surface polar phonon modes of the substrates reproduces the experiments very well. The role of surface phonons is further confirmed by resistivity measurements of nanotubes on aluminum nitride.

Original languageEnglish
Article number146601
JournalPhysical Review Letters
Volume107
Issue number14
DOIs
StatePublished - Sep 28 2011

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