Loss mechanism analysis in single-crystal and polycrystalline silicon MIS solar cells to produce 13% efficiency

Current mechanism studies have revealed band-to-band tunneling and surface state currents to control chromium MIS solar cell behavior. This information, together with intrinsic and design-related loss analysis, was used to optimize the design of the chromium MIS solar cell. It is shown that a high efficiency can be produced when the interface and grain boundary state densities are below 10¹² cm^-2 eV^-1, the interface oxide thickness is 12 - 18 Å, the grain size is above 40 μm and the doping density is 10¹⁶ - 10¹⁷ cm^-3. This computer-aided design was used to fabricate a 13.2% experimental solar cell in agreement with the predicted performance.