Local structure and chemical valency of Mn impurities in wide-band-gap III-V magnetic alloy semiconductors Ga1-xMnxN

Y. L. Soo; G. Kioseoglou; S. Kim; S. Huang; Y. H. Kao; S. Kuwabara; S. Owa; T. Kondo; H. Munekata

doi:10.1063/1.1423406

Local structure and chemical valency of Mn impurities in wide-band-gap III-V magnetic alloy semiconductors Ga_1-xMn_xN

Y. L. Soo
, G. Kioseoglou
, S. Kim
, S. Huang
, Y. H. Kao
, S. Kuwabara
, S. Owa
, T. Kondo
, H. Munekata

Physics

SUNY Buffalo
Institute of Science Tokyo

Research output: Contribution to journal › Article › peer-review

96 Scopus citations

Abstract

Local structure and effective chemical valency of Mn impurity atoms incorporated in wide-band-gap (Ga,Mn)N epilayers have been investigated by using x-ray absorption fine structure techniques. The x-ray results provide direct evidence for the substitution of majority Mn atoms for the Ga sites in GaN, with an effective valency close to Mn(II), up to a rather high Mn concentration about 2 at. %. A small fraction of the impurity atoms could also form Mn clusters.

Original language	English
Pages (from-to)	3926-3928
Number of pages	3
Journal	Applied Physics Letters
Volume	79
Issue number	24
DOIs	https://doi.org/10.1063/1.1423406
State	Published - Dec 10 2001

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title = "Local structure and chemical valency of Mn impurities in wide-band-gap III-V magnetic alloy semiconductors Ga1-xMnxN",

abstract = "Local structure and effective chemical valency of Mn impurity atoms incorporated in wide-band-gap (Ga,Mn)N epilayers have been investigated by using x-ray absorption fine structure techniques. The x-ray results provide direct evidence for the substitution of majority Mn atoms for the Ga sites in GaN, with an effective valency close to Mn(II), up to a rather high Mn concentration about 2 at. \%. A small fraction of the impurity atoms could also form Mn clusters.",

author = "Soo, \{Y. L.\} and G. Kioseoglou and S. Kim and S. Huang and Kao, \{Y. H.\} and S. Kuwabara and S. Owa and T. Kondo and H. Munekata",

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TY - JOUR

T1 - Local structure and chemical valency of Mn impurities in wide-band-gap III-V magnetic alloy semiconductors Ga1-xMnxN

AU - Soo, Y. L.

AU - Kioseoglou, G.

AU - Kim, S.

AU - Huang, S.

AU - Kao, Y. H.

AU - Kuwabara, S.

AU - Owa, S.

AU - Kondo, T.

AU - Munekata, H.

PY - 2001/12/10

Y1 - 2001/12/10

N2 - Local structure and effective chemical valency of Mn impurity atoms incorporated in wide-band-gap (Ga,Mn)N epilayers have been investigated by using x-ray absorption fine structure techniques. The x-ray results provide direct evidence for the substitution of majority Mn atoms for the Ga sites in GaN, with an effective valency close to Mn(II), up to a rather high Mn concentration about 2 at. %. A small fraction of the impurity atoms could also form Mn clusters.

AB - Local structure and effective chemical valency of Mn impurity atoms incorporated in wide-band-gap (Ga,Mn)N epilayers have been investigated by using x-ray absorption fine structure techniques. The x-ray results provide direct evidence for the substitution of majority Mn atoms for the Ga sites in GaN, with an effective valency close to Mn(II), up to a rather high Mn concentration about 2 at. %. A small fraction of the impurity atoms could also form Mn clusters.

UR - https://www.scopus.com/pages/publications/0035842767

U2 - 10.1063/1.1423406

DO - 10.1063/1.1423406

M3 - Article

AN - SCOPUS:0035842767

SN - 0003-6951

VL - 79

SP - 3926

EP - 3928

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 24

ER -

Local structure and chemical valency of Mn impurities in wide-band-gap III-V magnetic alloy semiconductors Ga_1-xMn_xN

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