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Link between O 2SiH infrared band amplitude and porous silicon photoluminescence during ambient O 3 oxidation

  • SUNY Buffalo

Research output: Contribution to journalArticlepeer-review

13 Scopus citations

Abstract

We carefully evaluate how porous silicon (pSi) surface oxidation by ozone (O 3) and the resulting changes in nanocrystallite surface chemistries (e.g., SiOSi, SiH x (x = 1-3), O ySiH (y = 1-2), and SiOH) influence the pSi photoluminescence (PL). We discover a relationship between the pSi PL and the O 2SiH band amplitude.

Original languageEnglish
Pages (from-to)951-957
Number of pages7
JournalApplied Spectroscopy
Volume66
Issue number8
DOIs
StatePublished - 2012

Keywords

  • Correlation
  • Infrared spectroscopy
  • Ozone
  • Photoluminescence
  • Porous silicon

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