Abstract
We carefully evaluate how porous silicon (pSi) surface oxidation by ozone (O 3) and the resulting changes in nanocrystallite surface chemistries (e.g., SiOSi, SiH x (x = 1-3), O ySiH (y = 1-2), and SiOH) influence the pSi photoluminescence (PL). We discover a relationship between the pSi PL and the O 2SiH band amplitude.
| Original language | English |
|---|---|
| Pages (from-to) | 951-957 |
| Number of pages | 7 |
| Journal | Applied Spectroscopy |
| Volume | 66 |
| Issue number | 8 |
| DOIs | |
| State | Published - 2012 |
Keywords
- Correlation
- Infrared spectroscopy
- Ozone
- Photoluminescence
- Porous silicon
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