Lateral epitaxial growth of (Ba,Sr)TiO 3 thin films

Jang Sik Lee; H. Wang; Sang Yeol Lee; S. R. Foltyn; Q. X. Jia

doi:10.1063/1.1637445

Lateral epitaxial growth of (Ba,Sr)TiO ₃ thin films

Jang Sik Lee
, H. Wang
, Sang Yeol Lee
, S. R. Foltyn
, Q. X. Jia

Department of Materials Design and Innovation

Los Alamos National Laboratory Materials Science and Technology Division
Yonsei University

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

A technique for epitaxial (Ba,Sr)TiO ₃(BST) thin-film growth by combination of selective heteroepitaxial and lateral homoepitaxial growth was reported. The BST thin films were deposited on LaAlO ₃ having amorphous SiO _x masking layers with stripe patterns at 450°C by pulsed-laser deposition. It was observed that the difference in BST nucleation temperatures from the amorphous masking regions and lattice-matched single-crystalline substrates enables selective nucleation. The heteroepitaxial growth takes place in the regions of single-crystalline substrates. The lateral homoepitaxial growth evolves from the crystallized BST towards the SiO _x masked region during postannealing process.

Original language	English
Pages (from-to)	5494-5496
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	26
DOIs	https://doi.org/10.1063/1.1637445
State	Published - Dec 29 2003

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title = "Lateral epitaxial growth of (Ba,Sr)TiO 3 thin films",

abstract = "A technique for epitaxial (Ba,Sr)TiO 3(BST) thin-film growth by combination of selective heteroepitaxial and lateral homoepitaxial growth was reported. The BST thin films were deposited on LaAlO 3 having amorphous SiO x masking layers with stripe patterns at 450°C by pulsed-laser deposition. It was observed that the difference in BST nucleation temperatures from the amorphous masking regions and lattice-matched single-crystalline substrates enables selective nucleation. The heteroepitaxial growth takes place in the regions of single-crystalline substrates. The lateral homoepitaxial growth evolves from the crystallized BST towards the SiO x masked region during postannealing process.",

author = "Lee, \{Jang Sik\} and H. Wang and Lee, \{Sang Yeol\} and Foltyn, \{S. R.\} and Jia, \{Q. X.\}",

year = "2003",

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doi = "10.1063/1.1637445",

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T1 - Lateral epitaxial growth of (Ba,Sr)TiO 3 thin films

AU - Lee, Jang Sik

AU - Wang, H.

AU - Lee, Sang Yeol

AU - Foltyn, S. R.

AU - Jia, Q. X.

PY - 2003/12/29

Y1 - 2003/12/29

N2 - A technique for epitaxial (Ba,Sr)TiO 3(BST) thin-film growth by combination of selective heteroepitaxial and lateral homoepitaxial growth was reported. The BST thin films were deposited on LaAlO 3 having amorphous SiO x masking layers with stripe patterns at 450°C by pulsed-laser deposition. It was observed that the difference in BST nucleation temperatures from the amorphous masking regions and lattice-matched single-crystalline substrates enables selective nucleation. The heteroepitaxial growth takes place in the regions of single-crystalline substrates. The lateral homoepitaxial growth evolves from the crystallized BST towards the SiO x masked region during postannealing process.

AB - A technique for epitaxial (Ba,Sr)TiO 3(BST) thin-film growth by combination of selective heteroepitaxial and lateral homoepitaxial growth was reported. The BST thin films were deposited on LaAlO 3 having amorphous SiO x masking layers with stripe patterns at 450°C by pulsed-laser deposition. It was observed that the difference in BST nucleation temperatures from the amorphous masking regions and lattice-matched single-crystalline substrates enables selective nucleation. The heteroepitaxial growth takes place in the regions of single-crystalline substrates. The lateral homoepitaxial growth evolves from the crystallized BST towards the SiO x masked region during postannealing process.

UR - https://www.scopus.com/pages/publications/0942288638

U2 - 10.1063/1.1637445

DO - 10.1063/1.1637445

M3 - Article

AN - SCOPUS:0942288638

SN - 0003-6951

VL - 83

SP - 5494

EP - 5496

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 26

ER -

Lateral epitaxial growth of (Ba,Sr)TiO ₃ thin films

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