Laser deposition of CdS/Y-Ba-Cu-O heterostructures

L. Shi; Y. Hashishin; S. Y. Dong; J. P. Zheng; H. S. Kwok

doi:10.1063/1.105314

Laser deposition of CdS/Y-Ba-Cu-O heterostructures

L. Shi
, Y. Hashishin
, S. Y. Dong
, J. P. Zheng
, H. S. Kwok

Department of Electrical Engineering

SUNY Buffalo

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Pulsed laser deposition was used to grow high-quality Y-Ba-Cu-O (YBCO) and CdS thin films sequentially on MgO. A temperature window between 200 and 250°C was found to be suitable for the deposition of CdS on YBCO. The transition temperature of the heterostructure was measured to be 72 K while the single YBCO film had a T_c of 85 K. The degradation was determined to be due to interface reaction, rather than the result of poor deposition conditions. X-ray measurements indicated that the CdS film was hexagonal and c-axis oriented. In situ resistivity measurement was used to monitor the film growth dynamics.

Original language	English
Pages (from-to)	1377-1379
Number of pages	3
Journal	Applied Physics Letters
Volume	59
Issue number	11
DOIs	https://doi.org/10.1063/1.105314
State	Published - 1991

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title = "Laser deposition of CdS/Y-Ba-Cu-O heterostructures",

abstract = "Pulsed laser deposition was used to grow high-quality Y-Ba-Cu-O (YBCO) and CdS thin films sequentially on MgO. A temperature window between 200 and 250°C was found to be suitable for the deposition of CdS on YBCO. The transition temperature of the heterostructure was measured to be 72 K while the single YBCO film had a Tc of 85 K. The degradation was determined to be due to interface reaction, rather than the result of poor deposition conditions. X-ray measurements indicated that the CdS film was hexagonal and c-axis oriented. In situ resistivity measurement was used to monitor the film growth dynamics.",

author = "L. Shi and Y. Hashishin and Dong, \{S. Y.\} and Zheng, \{J. P.\} and Kwok, \{H. S.\}",

year = "1991",

doi = "10.1063/1.105314",

language = "English",

volume = "59",

pages = "1377--1379",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "11",

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T1 - Laser deposition of CdS/Y-Ba-Cu-O heterostructures

AU - Shi, L.

AU - Hashishin, Y.

AU - Dong, S. Y.

AU - Zheng, J. P.

AU - Kwok, H. S.

PY - 1991

Y1 - 1991

N2 - Pulsed laser deposition was used to grow high-quality Y-Ba-Cu-O (YBCO) and CdS thin films sequentially on MgO. A temperature window between 200 and 250°C was found to be suitable for the deposition of CdS on YBCO. The transition temperature of the heterostructure was measured to be 72 K while the single YBCO film had a Tc of 85 K. The degradation was determined to be due to interface reaction, rather than the result of poor deposition conditions. X-ray measurements indicated that the CdS film was hexagonal and c-axis oriented. In situ resistivity measurement was used to monitor the film growth dynamics.

AB - Pulsed laser deposition was used to grow high-quality Y-Ba-Cu-O (YBCO) and CdS thin films sequentially on MgO. A temperature window between 200 and 250°C was found to be suitable for the deposition of CdS on YBCO. The transition temperature of the heterostructure was measured to be 72 K while the single YBCO film had a Tc of 85 K. The degradation was determined to be due to interface reaction, rather than the result of poor deposition conditions. X-ray measurements indicated that the CdS film was hexagonal and c-axis oriented. In situ resistivity measurement was used to monitor the film growth dynamics.

UR - https://www.scopus.com/pages/publications/36449003696

U2 - 10.1063/1.105314

DO - 10.1063/1.105314

M3 - Article

AN - SCOPUS:36449003696

SN - 0003-6951

VL - 59

SP - 1377

EP - 1379

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

ER -

Laser deposition of CdS/Y-Ba-Cu-O heterostructures

Abstract

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