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Laser annealing of hydrogenated amorphous silicon thick films

  • SUNY Buffalo

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Hydrogenated amorphous silicon thick films deposited by dc glow discharge on molybdenum substrates were annealed by a pulsed Nd:glass laser. Mass spectrometry showed hydrogen remaining in all the laser annealed films. The amount of hydrogen remaining decreased with decreasing scan rate. The hydrogen evolved upon heating at 365 °C and mainly at 658 °C before laser annealing, but at 365, 575 (mainly) and 645 °C after laser annealing, indicating weakening of the silicon-hydrogen bonding after laser annealing. The presence of hydrogen inhibited crystallization, as indicated by Raman scattering. The photo and dark conductivity of the film increased by one and three orders of magnitude respectively with increasing laser energy density up to 12 J/cm2 at a fixed scan rate. This means that the photoresponse was decreased with laser annealing, in spite of the associated increase in crystallinity. This photoresponse decrease is attributed to the hydrogen evolution.

Original languageEnglish
Title of host publicationCrystallization and Related Phenomena in Amorphous Materials
EditorsMatthew Libera, Tony E. Haynes, Peggy Cebe, James E. Dickinson Jr.
PublisherPubl by Materials Research Society
Pages719-724
Number of pages6
ISBN (Print)1558992200
StatePublished - 1994
EventProceedings of the 1993 Fall Meeting of the Materials Research Society - Boston, MA, USA
Duration: Nov 29 1993Dec 2 1993

Publication series

NameMaterials Research Society Symposium Proceedings
Volume321
ISSN (Print)0272-9172

Conference

ConferenceProceedings of the 1993 Fall Meeting of the Materials Research Society
CityBoston, MA, USA
Period11/29/9312/2/93

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