Laser annealing of ferroelectric SrBi2Ta2O 9, Pb(ZrxTi1-x)O3 and CeMnO 3 thin films

N. M. Sbrockey; J. D. Cuchiaro; L. G. Provost; C. E. Rice; S. Sun; G. S. Tompa; R. L. DeLeon; T. S. Kalkur

doi:10.1557/proc-784-c11.43

Laser annealing of ferroelectric SrBi₂Ta₂O ₉, Pb(Zr_xTi_1-x)O₃ and CeMnO ₃ thin films

N. M. Sbrockey
, J. D. Cuchiaro
, L. G. Provost
, C. E. Rice
, S. Sun
, G. S. Tompa
, R. L. DeLeon
, T. S. Kalkur

Center for Computational Research

Structured Materials Industries, Inc.
University of Colorado Colorado Springs

Research output: Contribution to journal › Conference article › peer-review

Abstract

Excimer laser annealing studies were conducted of SrBi₂Ta ₂O₉, Pb(Zr_xTi_1-x)O₃ and CeMnO₃ thin films. The main incentive was to develop a low temperature process for SrBi₂Ta₂O₉ thin films, which typically require a 750 C anneal to crystallize and achieve optimum ferroelectric properties. The results show that room temperature laser annealing can crystallize SrBi₂Ta₂O₉, with a strong (200) preferred orientation, The Pb(Zr_xTi_1-x)O₃ and CeMnO₃ thin films investigated in this study were crystalline as deposited. Laser annealing of the Pb(Zr_xTi_1-x)O ₃ and CeMnO₃ films did not result in a significant increase in crystallinity, as evidenced by the intensities of the x-ray diffraction peaks. Electrical characterization of laser annealed SrBi ₂Ta₂O₉ thin films showed good dielectric properties and the onset of ferroelectric behavior. Low temperature laser annealing is shown to be a viable approach to enable integration of ferroelectric SrBi₂Ta₂O₉ films with silicon based micro-electronics, for ferroelectric memory applications.

Original language	English
Pages (from-to)	157-162
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	784
DOIs	https://doi.org/10.1557/proc-784-c11.43
State	Published - 2003
Event	Ferroelectric Thin Films XII - Boston, MA, United States Duration: Dec 1 2003 → Dec 4 2003

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@article{a78cc31bcb8648aba23dfca4f6db0ccd,

title = "Laser annealing of ferroelectric SrBi2Ta2O 9, Pb(ZrxTi1-x)O3 and CeMnO 3 thin films",

abstract = "Excimer laser annealing studies were conducted of SrBi2Ta 2O9, Pb(ZrxTi1-x)O3 and CeMnO3 thin films. The main incentive was to develop a low temperature process for SrBi2Ta2O9 thin films, which typically require a 750 C anneal to crystallize and achieve optimum ferroelectric properties. The results show that room temperature laser annealing can crystallize SrBi2Ta2O9, with a strong (200) preferred orientation, The Pb(ZrxTi1-x)O3 and CeMnO3 thin films investigated in this study were crystalline as deposited. Laser annealing of the Pb(ZrxTi1-x)O 3 and CeMnO3 films did not result in a significant increase in crystallinity, as evidenced by the intensities of the x-ray diffraction peaks. Electrical characterization of laser annealed SrBi 2Ta2O9 thin films showed good dielectric properties and the onset of ferroelectric behavior. Low temperature laser annealing is shown to be a viable approach to enable integration of ferroelectric SrBi2Ta2O9 films with silicon based micro-electronics, for ferroelectric memory applications.",

author = "Sbrockey, \{N. M.\} and Cuchiaro, \{J. D.\} and Provost, \{L. G.\} and Rice, \{C. E.\} and S. Sun and Tompa, \{G. S.\} and DeLeon, \{R. L.\} and Kalkur, \{T. S.\}",

year = "2003",

doi = "10.1557/proc-784-c11.43",

language = "English",

volume = "784",

pages = "157--162",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

note = "Ferroelectric Thin Films XII ; Conference date: 01-12-2003 Through 04-12-2003",

}

TY - JOUR

T1 - Laser annealing of ferroelectric SrBi2Ta2O 9, Pb(ZrxTi1-x)O3 and CeMnO 3 thin films

AU - Sbrockey, N. M.

AU - Cuchiaro, J. D.

AU - Provost, L. G.

AU - Rice, C. E.

AU - Sun, S.

AU - Tompa, G. S.

AU - DeLeon, R. L.

AU - Kalkur, T. S.

PY - 2003

Y1 - 2003

N2 - Excimer laser annealing studies were conducted of SrBi2Ta 2O9, Pb(ZrxTi1-x)O3 and CeMnO3 thin films. The main incentive was to develop a low temperature process for SrBi2Ta2O9 thin films, which typically require a 750 C anneal to crystallize and achieve optimum ferroelectric properties. The results show that room temperature laser annealing can crystallize SrBi2Ta2O9, with a strong (200) preferred orientation, The Pb(ZrxTi1-x)O3 and CeMnO3 thin films investigated in this study were crystalline as deposited. Laser annealing of the Pb(ZrxTi1-x)O 3 and CeMnO3 films did not result in a significant increase in crystallinity, as evidenced by the intensities of the x-ray diffraction peaks. Electrical characterization of laser annealed SrBi 2Ta2O9 thin films showed good dielectric properties and the onset of ferroelectric behavior. Low temperature laser annealing is shown to be a viable approach to enable integration of ferroelectric SrBi2Ta2O9 films with silicon based micro-electronics, for ferroelectric memory applications.

AB - Excimer laser annealing studies were conducted of SrBi2Ta 2O9, Pb(ZrxTi1-x)O3 and CeMnO3 thin films. The main incentive was to develop a low temperature process for SrBi2Ta2O9 thin films, which typically require a 750 C anneal to crystallize and achieve optimum ferroelectric properties. The results show that room temperature laser annealing can crystallize SrBi2Ta2O9, with a strong (200) preferred orientation, The Pb(ZrxTi1-x)O3 and CeMnO3 thin films investigated in this study were crystalline as deposited. Laser annealing of the Pb(ZrxTi1-x)O 3 and CeMnO3 films did not result in a significant increase in crystallinity, as evidenced by the intensities of the x-ray diffraction peaks. Electrical characterization of laser annealed SrBi 2Ta2O9 thin films showed good dielectric properties and the onset of ferroelectric behavior. Low temperature laser annealing is shown to be a viable approach to enable integration of ferroelectric SrBi2Ta2O9 films with silicon based micro-electronics, for ferroelectric memory applications.

UR - https://www.scopus.com/pages/publications/2942689976

U2 - 10.1557/proc-784-c11.43

DO - 10.1557/proc-784-c11.43

M3 - Conference article

AN - SCOPUS:2942689976

SN - 0272-9172

VL - 784

SP - 157

EP - 162

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Ferroelectric Thin Films XII

Y2 - 1 December 2003 through 4 December 2003

ER -

Laser annealing of ferroelectric SrBi₂Ta₂O ₉, Pb(Zr_xTi_1-x)O₃ and CeMnO ₃ thin films

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