Large magnetoresistance in La0.7Sr0.3MnO3/SrTiO3/La 0.7Sr0.3MnO3 ramp-edge junctions

C. Kwon; Q. X. Jia; Y. Fan; M. F. Hundley; D. W. Reagor; J. Y. Coulter; D. E. Peterson

doi:10.1063/1.120794

Large magnetoresistance in La_0.7Sr_0.3MnO₃/SrTiO₃/La _0.7Sr_0.3MnO₃ ramp-edge junctions

C. Kwon
, Q. X. Jia
, Y. Fan
, M. F. Hundley
, D. W. Reagor
, J. Y. Coulter
, D. E. Peterson

Department of Materials Design and Innovation

Los Alamos National Laboratory Materials Science and Technology Division

Research output: Contribution to journal › Article › peer-review

72 Scopus citations

Abstract

We report on the fabrication of ferromagnet-insulator-ferromagnet junction devices using a ramp-edge geometry based on (La_0.7Sr_0.3)MnO₃ ferromagnetic electrodes and a SrTiO₃ insulator. The maximum junction magnetoresistance (JMR) as large as 23% is observed below 300 Oe at low temperatures (T<100K). Our ramp-edge junctions exhibit JMR of 6% at 200 K with a field less than 100 Oe. The device performance at room temperature is believed to be limited by both the nearly equivalent coercive fields in the electrodes and the magnetization process, rather than by the insulating barrier.

Original language	English
Pages (from-to)	486-488
Number of pages	3
Journal	Applied Physics Letters
Volume	72
Issue number	4
DOIs	https://doi.org/10.1063/1.120794
State	Published - 1998

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title = "Large magnetoresistance in La0.7Sr0.3MnO3/SrTiO3/La 0.7Sr0.3MnO3 ramp-edge junctions",

abstract = "We report on the fabrication of ferromagnet-insulator-ferromagnet junction devices using a ramp-edge geometry based on (La0.7Sr0.3)MnO3 ferromagnetic electrodes and a SrTiO3 insulator. The maximum junction magnetoresistance (JMR) as large as 23\% is observed below 300 Oe at low temperatures (T<100K). Our ramp-edge junctions exhibit JMR of 6\% at 200 K with a field less than 100 Oe. The device performance at room temperature is believed to be limited by both the nearly equivalent coercive fields in the electrodes and the magnetization process, rather than by the insulating barrier.",

author = "C. Kwon and Jia, \{Q. X.\} and Y. Fan and Hundley, \{M. F.\} and Reagor, \{D. W.\} and Coulter, \{J. Y.\} and Peterson, \{D. E.\}",

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doi = "10.1063/1.120794",

language = "English",

volume = "72",

pages = "486--488",

journal = "Applied Physics Letters",

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T1 - Large magnetoresistance in La0.7Sr0.3MnO3/SrTiO3/La 0.7Sr0.3MnO3 ramp-edge junctions

AU - Kwon, C.

AU - Jia, Q. X.

AU - Fan, Y.

AU - Hundley, M. F.

AU - Reagor, D. W.

AU - Coulter, J. Y.

AU - Peterson, D. E.

PY - 1998

Y1 - 1998

N2 - We report on the fabrication of ferromagnet-insulator-ferromagnet junction devices using a ramp-edge geometry based on (La0.7Sr0.3)MnO3 ferromagnetic electrodes and a SrTiO3 insulator. The maximum junction magnetoresistance (JMR) as large as 23% is observed below 300 Oe at low temperatures (T<100K). Our ramp-edge junctions exhibit JMR of 6% at 200 K with a field less than 100 Oe. The device performance at room temperature is believed to be limited by both the nearly equivalent coercive fields in the electrodes and the magnetization process, rather than by the insulating barrier.

AB - We report on the fabrication of ferromagnet-insulator-ferromagnet junction devices using a ramp-edge geometry based on (La0.7Sr0.3)MnO3 ferromagnetic electrodes and a SrTiO3 insulator. The maximum junction magnetoresistance (JMR) as large as 23% is observed below 300 Oe at low temperatures (T<100K). Our ramp-edge junctions exhibit JMR of 6% at 200 K with a field less than 100 Oe. The device performance at room temperature is believed to be limited by both the nearly equivalent coercive fields in the electrodes and the magnetization process, rather than by the insulating barrier.

UR - https://www.scopus.com/pages/publications/0000517656

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DO - 10.1063/1.120794

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AN - SCOPUS:0000517656

SN - 0003-6951

VL - 72

SP - 486

EP - 488

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

ER -

Large magnetoresistance in La_0.7Sr_0.3MnO₃/SrTiO₃/La _0.7Sr_0.3MnO₃ ramp-edge junctions

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