Large hysteretic magnetoresistance in high-mobility semiconductor quantum wires bridged by single-domain nanomagnets

J. U. Bae; T. Y. Lin; Y. Yoon; S. J. Kim; J. P. Bird; A. Imre; W. Porod; J. L. Reno

doi:10.1063/1.2756270

Large hysteretic magnetoresistance in high-mobility semiconductor quantum wires bridged by single-domain nanomagnets

J. U. Bae
, T. Y. Lin
, Y. Yoon
, S. J. Kim
, J. P. Bird
, A. Imre
, W. Porod
, J. L. Reno

Department of Electrical Engineering

SUNY Buffalo
University of Notre Dame
Sandia National Laboratories, New Mexico

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

The authors discuss hysteresis in the magnetoresistance of hybrid semiconductor/ferromagnetic devices composed of high-mobility semiconductor quantum wires (QWs) bridged by single-domain Co nanomagnets (NMs). This hysteresis is shown to be consistent with the ballistic transport of electrons in the QW through the nonuniform magnetic field generated by the NM. It is also found to be strongly dependent on tilt angle, suggestive of a transition between easy- and hard-axis magnetizations.

Original language	English
Article number	022105
Journal	Applied Physics Letters
Volume	91
Issue number	2
DOIs	https://doi.org/10.1063/1.2756270
State	Published - 2007

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title = "Large hysteretic magnetoresistance in high-mobility semiconductor quantum wires bridged by single-domain nanomagnets",

abstract = "The authors discuss hysteresis in the magnetoresistance of hybrid semiconductor/ferromagnetic devices composed of high-mobility semiconductor quantum wires (QWs) bridged by single-domain Co nanomagnets (NMs). This hysteresis is shown to be consistent with the ballistic transport of electrons in the QW through the nonuniform magnetic field generated by the NM. It is also found to be strongly dependent on tilt angle, suggestive of a transition between easy- and hard-axis magnetizations.",

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AU - Bae, J. U.

AU - Lin, T. Y.

AU - Yoon, Y.

AU - Kim, S. J.

AU - Bird, J. P.

AU - Imre, A.

AU - Porod, W.

AU - Reno, J. L.

PY - 2007

Y1 - 2007

N2 - The authors discuss hysteresis in the magnetoresistance of hybrid semiconductor/ferromagnetic devices composed of high-mobility semiconductor quantum wires (QWs) bridged by single-domain Co nanomagnets (NMs). This hysteresis is shown to be consistent with the ballistic transport of electrons in the QW through the nonuniform magnetic field generated by the NM. It is also found to be strongly dependent on tilt angle, suggestive of a transition between easy- and hard-axis magnetizations.

AB - The authors discuss hysteresis in the magnetoresistance of hybrid semiconductor/ferromagnetic devices composed of high-mobility semiconductor quantum wires (QWs) bridged by single-domain Co nanomagnets (NMs). This hysteresis is shown to be consistent with the ballistic transport of electrons in the QW through the nonuniform magnetic field generated by the NM. It is also found to be strongly dependent on tilt angle, suggestive of a transition between easy- and hard-axis magnetizations.

UR - https://www.scopus.com/pages/publications/34547218416

U2 - 10.1063/1.2756270

DO - 10.1063/1.2756270

M3 - Article

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JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

Large hysteretic magnetoresistance in high-mobility semiconductor quantum wires bridged by single-domain nanomagnets

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