Large g-factor enhancement in high-mobility InAs/AlSb quantum wells

Yu G. Sadofyev; A. Ramamoorthy; B. Naser; J. P. Bird; S. R. Johnson; Y. H. Zhang

doi:10.1063/1.1504882

Large g-factor enhancement in high-mobility InAs/AlSb quantum wells

Yu G. Sadofyev
, A. Ramamoorthy
, B. Naser
, J. P. Bird
, S. R. Johnson
, Y. H. Zhang

Department of Electrical Engineering

Arizona State University

Research output: Contribution to journal › Article › peer-review

51 Scopus citations

Abstract

We discuss the growth by molecular-beam epitaxy, and studies of the low-temperature electrical properties, of undoped InAs/AlSb quantum wells. The two-dimensional electron gas realized in the wells exhibits high mobility at low temperatures, and an analysis of its Shubnikov-de Haas oscillations suggests this mobility is limited by scattering from remotely located unintentional dopants. Spin splitting of the oscillations is clearly resolved at 4.2 K, revealing a g-factor as large as -60 at high magnetic fields. The size of this enhancement increases with decreasing electron density, and is thought to reflect the associated increase in the strength of the effective Coulomb interaction.

Original language	English
Pages (from-to)	1833-1835
Number of pages	3
Journal	Applied Physics Letters
Volume	81
Issue number	10
DOIs	https://doi.org/10.1063/1.1504882
State	Published - Sep 2 2002

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abstract = "We discuss the growth by molecular-beam epitaxy, and studies of the low-temperature electrical properties, of undoped InAs/AlSb quantum wells. The two-dimensional electron gas realized in the wells exhibits high mobility at low temperatures, and an analysis of its Shubnikov-de Haas oscillations suggests this mobility is limited by scattering from remotely located unintentional dopants. Spin splitting of the oscillations is clearly resolved at 4.2 K, revealing a g-factor as large as -60 at high magnetic fields. The size of this enhancement increases with decreasing electron density, and is thought to reflect the associated increase in the strength of the effective Coulomb interaction.",

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AU - Sadofyev, Yu G.

AU - Ramamoorthy, A.

AU - Naser, B.

AU - Bird, J. P.

AU - Johnson, S. R.

AU - Zhang, Y. H.

PY - 2002/9/2

Y1 - 2002/9/2

N2 - We discuss the growth by molecular-beam epitaxy, and studies of the low-temperature electrical properties, of undoped InAs/AlSb quantum wells. The two-dimensional electron gas realized in the wells exhibits high mobility at low temperatures, and an analysis of its Shubnikov-de Haas oscillations suggests this mobility is limited by scattering from remotely located unintentional dopants. Spin splitting of the oscillations is clearly resolved at 4.2 K, revealing a g-factor as large as -60 at high magnetic fields. The size of this enhancement increases with decreasing electron density, and is thought to reflect the associated increase in the strength of the effective Coulomb interaction.

AB - We discuss the growth by molecular-beam epitaxy, and studies of the low-temperature electrical properties, of undoped InAs/AlSb quantum wells. The two-dimensional electron gas realized in the wells exhibits high mobility at low temperatures, and an analysis of its Shubnikov-de Haas oscillations suggests this mobility is limited by scattering from remotely located unintentional dopants. Spin splitting of the oscillations is clearly resolved at 4.2 K, revealing a g-factor as large as -60 at high magnetic fields. The size of this enhancement increases with decreasing electron density, and is thought to reflect the associated increase in the strength of the effective Coulomb interaction.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

Large g-factor enhancement in high-mobility InAs/AlSb quantum wells

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