Kinetics of diamond-like film growth using filament-assisted chemical vapor deposition

G. Gorsuch; Y. Jin; N. K. Ingle; T. J. Mountziaris; W. Y. Yu; A. Petrou

Kinetics of diamond-like film growth using filament-assisted chemical vapor deposition

G. Gorsuch
, Y. Jin
, N. K. Ingle
, T. J. Mountziaris
, W. Y. Yu
, A. Petrou

Physics

SUNY Buffalo

Research output: Contribution to journal › Conference article › peer-review

Abstract

A detailed kinetic model of diamond-like film growth from methane diluted in hydrogen using low-pressure, filament-assisted chemical vapor deposition (FACVD) has been developed. The surface kinetics include adsorption of CH₃, and H., abstraction reactions by gas-phase radicals, desorption, and two pathways for diamond (sp³) and graphitic carbon (sp²) growth. It is postulated that adsorbed CH₂. species are the major film precursors. The proposed kinetic model was incorporated into a transport model describing flow, heat and mass transfer in stagnation flow FACVD reactors. The proposed model predicts observed film growth rates, compositions and stable species distributions in the gas phase. It is the first complete model of FACVD that includes gas-phase and surface kinetics coupled with transport phenomena.

Original language	English
Pages (from-to)	151-156
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	363
State	Published - 1995
Event	Proceedings of the 1994 MRS Fall Meeting - Boston, MA, USA Duration: Nov 28 1994 → Nov 30 1994

Cite this

@article{1ff50a158c45492cbf16c9c6015132a3,

title = "Kinetics of diamond-like film growth using filament-assisted chemical vapor deposition",

abstract = "A detailed kinetic model of diamond-like film growth from methane diluted in hydrogen using low-pressure, filament-assisted chemical vapor deposition (FACVD) has been developed. The surface kinetics include adsorption of CH3, and H., abstraction reactions by gas-phase radicals, desorption, and two pathways for diamond (sp3) and graphitic carbon (sp2) growth. It is postulated that adsorbed CH2. species are the major film precursors. The proposed kinetic model was incorporated into a transport model describing flow, heat and mass transfer in stagnation flow FACVD reactors. The proposed model predicts observed film growth rates, compositions and stable species distributions in the gas phase. It is the first complete model of FACVD that includes gas-phase and surface kinetics coupled with transport phenomena.",

author = "G. Gorsuch and Y. Jin and Ingle, \{N. K.\} and Mountziaris, \{T. J.\} and Yu, \{W. Y.\} and A. Petrou",

year = "1995",

language = "English",

volume = "363",

pages = "151--156",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1994 MRS Fall Meeting ; Conference date: 28-11-1994 Through 30-11-1994",

}

TY - JOUR

T1 - Kinetics of diamond-like film growth using filament-assisted chemical vapor deposition

AU - Gorsuch, G.

AU - Jin, Y.

AU - Ingle, N. K.

AU - Mountziaris, T. J.

AU - Yu, W. Y.

AU - Petrou, A.

PY - 1995

Y1 - 1995

N2 - A detailed kinetic model of diamond-like film growth from methane diluted in hydrogen using low-pressure, filament-assisted chemical vapor deposition (FACVD) has been developed. The surface kinetics include adsorption of CH3, and H., abstraction reactions by gas-phase radicals, desorption, and two pathways for diamond (sp3) and graphitic carbon (sp2) growth. It is postulated that adsorbed CH2. species are the major film precursors. The proposed kinetic model was incorporated into a transport model describing flow, heat and mass transfer in stagnation flow FACVD reactors. The proposed model predicts observed film growth rates, compositions and stable species distributions in the gas phase. It is the first complete model of FACVD that includes gas-phase and surface kinetics coupled with transport phenomena.

AB - A detailed kinetic model of diamond-like film growth from methane diluted in hydrogen using low-pressure, filament-assisted chemical vapor deposition (FACVD) has been developed. The surface kinetics include adsorption of CH3, and H., abstraction reactions by gas-phase radicals, desorption, and two pathways for diamond (sp3) and graphitic carbon (sp2) growth. It is postulated that adsorbed CH2. species are the major film precursors. The proposed kinetic model was incorporated into a transport model describing flow, heat and mass transfer in stagnation flow FACVD reactors. The proposed model predicts observed film growth rates, compositions and stable species distributions in the gas phase. It is the first complete model of FACVD that includes gas-phase and surface kinetics coupled with transport phenomena.

UR - https://www.scopus.com/pages/publications/0029227710

M3 - Conference article

AN - SCOPUS:0029227710

SN - 0272-9172

VL - 363

SP - 151

EP - 156

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1994 MRS Fall Meeting

Y2 - 28 November 1994 through 30 November 1994

ER -

Kinetics of diamond-like film growth using filament-assisted chemical vapor deposition

Abstract

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