Abstract
We have studied the growth of magnesium oxide using ion-beam assisted deposition (IBAD) to achieve (100) oriented, bi-axially textured films with low mosaic spread, for film thicknesses of 10 nm on silicon substrates. We have refined the process by using reflected high-energy electron diffraction (RHEED) to monitor the growth of IBAD MgO films and found that the diffracted intensity can be used to determine (and ultimately control) final in-plane texture of the film. Here we present results on our work to develop the use of real-time RHEED monitoring to deposit well-oriented IBAD MgO films. The results have been corroborated with extensive grazing-incidence X-ray diffraction (GID). Results of these analyses have allowed us to deposit films on metallic substrates with in-plane mosaic spread less than 7°.
| Original language | English |
|---|---|
| Pages (from-to) | F1061-F1066 |
| Journal | Materials Research Society Symposium - Proceedings |
| Volume | 666 |
| DOIs | |
| State | Published - 2001 |
| Event | Transport and Microstructural Phenomena in Oxide Electronics - San Francisco, CA, United States Duration: Apr 16 2001 → Apr 20 2001 |
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