Investigation of ZnMnTe weakly diluted FCC magnetic semiconductor

P. Kłosowski; T. M. Giebułtowicz; N. Samarth; H. Luo; J. K. Furdyna; J. J. Rhyne

doi:10.1016/0921-4526(92)90677-K

Investigation of ZnMnTe weakly diluted FCC magnetic semiconductor

P. Kłosowski
, T. M. Giebułtowicz
, N. Samarth
, H. Luo
, J. K. Furdyna
, J. J. Rhyne

Physics

University of Notre Dame
National Institute of Standards and Technology
University of Missouri

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

We report neutron diffraction studies of Zn_1-xMn_xTe epitaxial layers for x=0.71, 0.84, 0.94 and 1 (pure MnTe). Molecular beam epitaxy (MBE) was used to grow the crystals on a GaAs (100) surface, resulting in zinc blende (ZB) crystallographic structure of the epilayers for all compositions. The film thickness were in the micrometer range, and could be characterized as bulk-like in terms of the strain and magnetic properties. The quality of the crystal was remarkably good, giving an indication that the NiAs form of MnTe grown by conventional techniques may be metastable at room temperature.

Original language	English
Pages (from-to)	114-116
Number of pages	3
Journal	Physica B: Condensed Matter
Volume	180-181
Issue number	PART 1
DOIs	https://doi.org/10.1016/0921-4526(92)90677-K
State	Published - Jun 2 1992

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title = "Investigation of ZnMnTe weakly diluted FCC magnetic semiconductor",

abstract = "We report neutron diffraction studies of Zn1-xMnxTe epitaxial layers for x=0.71, 0.84, 0.94 and 1 (pure MnTe). Molecular beam epitaxy (MBE) was used to grow the crystals on a GaAs (100) surface, resulting in zinc blende (ZB) crystallographic structure of the epilayers for all compositions. The film thickness were in the micrometer range, and could be characterized as bulk-like in terms of the strain and magnetic properties. The quality of the crystal was remarkably good, giving an indication that the NiAs form of MnTe grown by conventional techniques may be metastable at room temperature.",

author = "P. K{\l}osowski and Giebu{\l}towicz, \{T. M.\} and N. Samarth and H. Luo and Furdyna, \{J. K.\} and Rhyne, \{J. J.\}",

year = "1992",

month = jun,

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doi = "10.1016/0921-4526(92)90677-K",

language = "English",

volume = "180-181",

pages = "114--116",

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TY - JOUR

T1 - Investigation of ZnMnTe weakly diluted FCC magnetic semiconductor

AU - Kłosowski, P.

AU - Giebułtowicz, T. M.

AU - Samarth, N.

AU - Luo, H.

AU - Furdyna, J. K.

AU - Rhyne, J. J.

PY - 1992/6/2

Y1 - 1992/6/2

N2 - We report neutron diffraction studies of Zn1-xMnxTe epitaxial layers for x=0.71, 0.84, 0.94 and 1 (pure MnTe). Molecular beam epitaxy (MBE) was used to grow the crystals on a GaAs (100) surface, resulting in zinc blende (ZB) crystallographic structure of the epilayers for all compositions. The film thickness were in the micrometer range, and could be characterized as bulk-like in terms of the strain and magnetic properties. The quality of the crystal was remarkably good, giving an indication that the NiAs form of MnTe grown by conventional techniques may be metastable at room temperature.

AB - We report neutron diffraction studies of Zn1-xMnxTe epitaxial layers for x=0.71, 0.84, 0.94 and 1 (pure MnTe). Molecular beam epitaxy (MBE) was used to grow the crystals on a GaAs (100) surface, resulting in zinc blende (ZB) crystallographic structure of the epilayers for all compositions. The film thickness were in the micrometer range, and could be characterized as bulk-like in terms of the strain and magnetic properties. The quality of the crystal was remarkably good, giving an indication that the NiAs form of MnTe grown by conventional techniques may be metastable at room temperature.

UR - https://www.scopus.com/pages/publications/0027108991

U2 - 10.1016/0921-4526(92)90677-K

DO - 10.1016/0921-4526(92)90677-K

M3 - Article

AN - SCOPUS:0027108991

SN - 0921-4526

VL - 180-181

SP - 114

EP - 116

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

IS - PART 1

ER -

Investigation of ZnMnTe weakly diluted FCC magnetic semiconductor

Abstract

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