Investigation of the growth dynamics of pulsed laser-deposited RuO2 films using in situ resistance measurement and atomic force microscopy

Xu Wang; Arthur F. Pun; Yan Xin; Jim P. Zheng

doi:10.1016/j.tsf.2005.12.246

Investigation of the growth dynamics of pulsed laser-deposited RuO₂ films using in situ resistance measurement and atomic force microscopy

Xu Wang
, Arthur F. Pun
, Yan Xin
, Jim P. Zheng

Department of Electrical Engineering

Florida State University
National High Magnetic Field Laboratory

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

RuO₂ thin films were grown on (001) LaAlO₃ utilizing the pulsed laser deposition technique. Atomic force microscopy was used to check the topography of films at different growth stages. The in situ resistivity measurement was used to monitor the resistance change during and post film growth with changes of resistivity associated with the change of film growth mode. Transmission electron microscopy was used to reveal film quality and crystalline information. The layer-plus-island Stranski-Krastanov growth mode is proposed according to above results. The ambient O₂ filled during growth is found to be the main oxygen source for the formed RuO₂.

Original language	English
Pages (from-to)	82-87
Number of pages	6
Journal	Thin Solid Films
Volume	510
Issue number	1-2
DOIs	https://doi.org/10.1016/j.tsf.2005.12.246
State	Published - Jul 3 2006

Keywords

Film growth
In situ resistance measurement
Pulsed laser deposition
RuO films

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10.1016/j.tsf.2005.12.246

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title = "Investigation of the growth dynamics of pulsed laser-deposited RuO2 films using in situ resistance measurement and atomic force microscopy",

abstract = "RuO2 thin films were grown on (001) LaAlO3 utilizing the pulsed laser deposition technique. Atomic force microscopy was used to check the topography of films at different growth stages. The in situ resistivity measurement was used to monitor the resistance change during and post film growth with changes of resistivity associated with the change of film growth mode. Transmission electron microscopy was used to reveal film quality and crystalline information. The layer-plus-island Stranski-Krastanov growth mode is proposed according to above results. The ambient O2 filled during growth is found to be the main oxygen source for the formed RuO2.",

keywords = "Film growth, In situ resistance measurement, Pulsed laser deposition, RuO films",

author = "Xu Wang and Pun, \{Arthur F.\} and Yan Xin and Zheng, \{Jim P.\}",

year = "2006",

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doi = "10.1016/j.tsf.2005.12.246",

language = "English",

volume = "510",

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journal = "Thin Solid Films",

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T1 - Investigation of the growth dynamics of pulsed laser-deposited RuO2 films using in situ resistance measurement and atomic force microscopy

AU - Wang, Xu

AU - Pun, Arthur F.

AU - Xin, Yan

AU - Zheng, Jim P.

PY - 2006/7/3

Y1 - 2006/7/3

N2 - RuO2 thin films were grown on (001) LaAlO3 utilizing the pulsed laser deposition technique. Atomic force microscopy was used to check the topography of films at different growth stages. The in situ resistivity measurement was used to monitor the resistance change during and post film growth with changes of resistivity associated with the change of film growth mode. Transmission electron microscopy was used to reveal film quality and crystalline information. The layer-plus-island Stranski-Krastanov growth mode is proposed according to above results. The ambient O2 filled during growth is found to be the main oxygen source for the formed RuO2.

AB - RuO2 thin films were grown on (001) LaAlO3 utilizing the pulsed laser deposition technique. Atomic force microscopy was used to check the topography of films at different growth stages. The in situ resistivity measurement was used to monitor the resistance change during and post film growth with changes of resistivity associated with the change of film growth mode. Transmission electron microscopy was used to reveal film quality and crystalline information. The layer-plus-island Stranski-Krastanov growth mode is proposed according to above results. The ambient O2 filled during growth is found to be the main oxygen source for the formed RuO2.

KW - Film growth

KW - In situ resistance measurement

KW - Pulsed laser deposition

KW - RuO films

UR - https://www.scopus.com/pages/publications/33747621141

U2 - 10.1016/j.tsf.2005.12.246

DO - 10.1016/j.tsf.2005.12.246

M3 - Article

AN - SCOPUS:33747621141

SN - 0040-6090

VL - 510

SP - 82

EP - 87

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

ER -

Investigation of the growth dynamics of pulsed laser-deposited RuO₂ films using in situ resistance measurement and atomic force microscopy

Abstract

Keywords

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