Investigation of nanoscale structure in digital layers of Mn/GaAs and MnGa/GaAs

G. Kioseoglou; S. Kim; Y. L. Soo; X. Chen; H. Luo; Y. H. Kao; Y. Sasaki; X. Liu; J. K. Furdyna

doi:10.1063/1.1448658

Investigation of nanoscale structure in digital layers of Mn/GaAs and MnGa/GaAs

G. Kioseoglou
, S. Kim
, Y. L. Soo
, X. Chen
, H. Luo
, Y. H. Kao
, Y. Sasaki
, X. Liu
, J. K. Furdyna

Physics

SUNY Buffalo
University of Notre Dame

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

Grazing incidence x-ray scattering (GIXS) and x-ray diffraction (XRD) techniques have been employed to study the microscopic structure of magnetic digital layers of Mn/GaAs and MnGa/GaAs. Samples with various GaAs layer thickness (8 to 16 monolayers) and a half monolayer of either Mn or MnGa were prepared by low-temperature molecular-beam epitaxy. All digital alloys consist of 50 periods of magnetic layers separated by GaAs. High crystalline quality was verified and the periodicity and layer thickness were determined from the GIXS and XRD data. In order to investigate the magnetic properties, we performed magnetization measurements on all samples using superconducting quantum interference device magnetometry (SQUID).

Original language	English
Pages (from-to)	1150-1152
Number of pages	3
Journal	Applied Physics Letters
Volume	80
Issue number	7
DOIs	https://doi.org/10.1063/1.1448658
State	Published - Feb 18 2002

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title = "Investigation of nanoscale structure in digital layers of Mn/GaAs and MnGa/GaAs",

abstract = "Grazing incidence x-ray scattering (GIXS) and x-ray diffraction (XRD) techniques have been employed to study the microscopic structure of magnetic digital layers of Mn/GaAs and MnGa/GaAs. Samples with various GaAs layer thickness (8 to 16 monolayers) and a half monolayer of either Mn or MnGa were prepared by low-temperature molecular-beam epitaxy. All digital alloys consist of 50 periods of magnetic layers separated by GaAs. High crystalline quality was verified and the periodicity and layer thickness were determined from the GIXS and XRD data. In order to investigate the magnetic properties, we performed magnetization measurements on all samples using superconducting quantum interference device magnetometry (SQUID).",

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year = "2002",

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doi = "10.1063/1.1448658",

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journal = "Applied Physics Letters",

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TY - JOUR

T1 - Investigation of nanoscale structure in digital layers of Mn/GaAs and MnGa/GaAs

AU - Kioseoglou, G.

AU - Kim, S.

AU - Soo, Y. L.

AU - Chen, X.

AU - Luo, H.

AU - Kao, Y. H.

AU - Sasaki, Y.

AU - Liu, X.

AU - Furdyna, J. K.

PY - 2002/2/18

Y1 - 2002/2/18

N2 - Grazing incidence x-ray scattering (GIXS) and x-ray diffraction (XRD) techniques have been employed to study the microscopic structure of magnetic digital layers of Mn/GaAs and MnGa/GaAs. Samples with various GaAs layer thickness (8 to 16 monolayers) and a half monolayer of either Mn or MnGa were prepared by low-temperature molecular-beam epitaxy. All digital alloys consist of 50 periods of magnetic layers separated by GaAs. High crystalline quality was verified and the periodicity and layer thickness were determined from the GIXS and XRD data. In order to investigate the magnetic properties, we performed magnetization measurements on all samples using superconducting quantum interference device magnetometry (SQUID).

AB - Grazing incidence x-ray scattering (GIXS) and x-ray diffraction (XRD) techniques have been employed to study the microscopic structure of magnetic digital layers of Mn/GaAs and MnGa/GaAs. Samples with various GaAs layer thickness (8 to 16 monolayers) and a half monolayer of either Mn or MnGa were prepared by low-temperature molecular-beam epitaxy. All digital alloys consist of 50 periods of magnetic layers separated by GaAs. High crystalline quality was verified and the periodicity and layer thickness were determined from the GIXS and XRD data. In order to investigate the magnetic properties, we performed magnetization measurements on all samples using superconducting quantum interference device magnetometry (SQUID).

UR - https://www.scopus.com/pages/publications/79955997668

U2 - 10.1063/1.1448658

DO - 10.1063/1.1448658

M3 - Article

AN - SCOPUS:79955997668

SN - 0003-6951

VL - 80

SP - 1150

EP - 1152

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 7

ER -

Investigation of nanoscale structure in digital layers of Mn/GaAs and MnGa/GaAs

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