Investigation of InAs/GaAs1-xSbx quantum dots for applications in intermediate band solar cells

Y. Cheng; M. Fukuda; V. R. Whiteside; M. C. Debnath; P. J. Vallely; T. D. Mishima; M. B. Santos; K. Hossain; S. Hatch; H. Y. Liu; I. R. Sellers

doi:10.1016/j.solmat.2015.11.046

Investigation of InAs/GaAs_1-xSb_x quantum dots for applications in intermediate band solar cells

Y. Cheng
, M. Fukuda
, V. R. Whiteside
, M. C. Debnath
, P. J. Vallely
, T. D. Mishima
, M. B. Santos
, K. Hossain
, S. Hatch
, H. Y. Liu
, I. R. Sellers

Department of Electrical Engineering

University of Oklahoma
Amethyst Research Inc
University College London

Research output: Contribution to journal › Article › peer-review

27 Scopus citations

Abstract

Self-assembled InAs quantum dots (QD) in a GaAs_1-xSb_x matrix are studied using photoluminescence. Increasing the Sb composition in the GaAs_1-xSb_x matrix reduces the effective band gap while lowering the valence band offset, resulting in transition from a type-I to type-II band alignment for Sb compositions above 14%. The optimized quantum dots are incorporated in an InAs/GaAs_1-xSb_x based p-i-n solar cell with a degenerate valence band and therefore optimum intermediate band structure. Temperature dependent external quantum efficiency measurements show an enhancement in the QDs region with increasing temperature.

Original language	English
Pages (from-to)	94-100
Number of pages	7
Journal	Solar Energy Materials and Solar Cells
Volume	147
DOIs	https://doi.org/10.1016/j.solmat.2015.11.046
State	Published - Apr 1 2016

Keywords

Defect mediated tunneling
Intermediate band solar cell
Type-II quantum dots

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10.1016/j.solmat.2015.11.046

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title = "Investigation of InAs/GaAs1-xSbx quantum dots for applications in intermediate band solar cells",

abstract = "Self-assembled InAs quantum dots (QD) in a GaAs1-xSbx matrix are studied using photoluminescence. Increasing the Sb composition in the GaAs1-xSbx matrix reduces the effective band gap while lowering the valence band offset, resulting in transition from a type-I to type-II band alignment for Sb compositions above 14\%. The optimized quantum dots are incorporated in an InAs/GaAs1-xSbx based p-i-n solar cell with a degenerate valence band and therefore optimum intermediate band structure. Temperature dependent external quantum efficiency measurements show an enhancement in the QDs region with increasing temperature.",

keywords = "Defect mediated tunneling, Intermediate band solar cell, Type-II quantum dots",

author = "Y. Cheng and M. Fukuda and Whiteside, \{V. R.\} and Debnath, \{M. C.\} and Vallely, \{P. J.\} and Mishima, \{T. D.\} and Santos, \{M. B.\} and K. Hossain and S. Hatch and Liu, \{H. Y.\} and Sellers, \{I. R.\}",

note = "Publisher Copyright: {\textcopyright} 2015 Elsevier B.V.",

year = "2016",

month = apr,

day = "1",

doi = "10.1016/j.solmat.2015.11.046",

language = "English",

volume = "147",

pages = "94--100",

journal = "Solar Energy Materials and Solar Cells",

issn = "0927-0248",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Investigation of InAs/GaAs1-xSbx quantum dots for applications in intermediate band solar cells

AU - Cheng, Y.

AU - Fukuda, M.

AU - Whiteside, V. R.

AU - Debnath, M. C.

AU - Vallely, P. J.

AU - Mishima, T. D.

AU - Santos, M. B.

AU - Hossain, K.

AU - Hatch, S.

AU - Liu, H. Y.

AU - Sellers, I. R.

PY - 2016/4/1

Y1 - 2016/4/1

N2 - Self-assembled InAs quantum dots (QD) in a GaAs1-xSbx matrix are studied using photoluminescence. Increasing the Sb composition in the GaAs1-xSbx matrix reduces the effective band gap while lowering the valence band offset, resulting in transition from a type-I to type-II band alignment for Sb compositions above 14%. The optimized quantum dots are incorporated in an InAs/GaAs1-xSbx based p-i-n solar cell with a degenerate valence band and therefore optimum intermediate band structure. Temperature dependent external quantum efficiency measurements show an enhancement in the QDs region with increasing temperature.

AB - Self-assembled InAs quantum dots (QD) in a GaAs1-xSbx matrix are studied using photoluminescence. Increasing the Sb composition in the GaAs1-xSbx matrix reduces the effective band gap while lowering the valence band offset, resulting in transition from a type-I to type-II band alignment for Sb compositions above 14%. The optimized quantum dots are incorporated in an InAs/GaAs1-xSbx based p-i-n solar cell with a degenerate valence band and therefore optimum intermediate band structure. Temperature dependent external quantum efficiency measurements show an enhancement in the QDs region with increasing temperature.

KW - Defect mediated tunneling

KW - Intermediate band solar cell

KW - Type-II quantum dots

UR - https://www.scopus.com/pages/publications/84950246519

U2 - 10.1016/j.solmat.2015.11.046

DO - 10.1016/j.solmat.2015.11.046

M3 - Article

AN - SCOPUS:84950246519

SN - 0927-0248

VL - 147

SP - 94

EP - 100

JO - Solar Energy Materials and Solar Cells

JF - Solar Energy Materials and Solar Cells

ER -

Investigation of InAs/GaAs_1-xSb_x quantum dots for applications in intermediate band solar cells

Abstract

Keywords

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