@inproceedings{dbbdcf345a274fa387c47a63e9ca5e15,
title = "Investigation of InAs/GaAs1-xSbx quantum dots for applications in intermediate band solar cells",
abstract = "The reduction of the effective band gap and the valence band offset are observed by increasing the Sb composition in GaAs1-xSbx matrix encapsulating InAs quantum dots (QDs). To investigate the potential of the InAs/GaAs1-xSbx system for intermediate band solar cells a p-i-n solar cell with a degenerate valence band is grown. An enhancement in the QDs region with increasing temperature is observed in temperature dependent external quantum efficiency measurements. An 's-shape' behavior of the short circuit current density, JSc, is observed as the temperature increases. Ongoing investigations to illuminate the physical mechanisms contributing to the 's-shape' behavior of Jsc will also be presented.",
author = "Y. Cheng and M. Fukuda and Whiteside, \{V. R.\} and Debnath, \{M. C.\} and Vallely, \{P. J.\} and Meleco, \{A. J.\} and Roeth, \{A. J.\} and Mishima, \{T. D.\} and Santos, \{M. B.\} and K. Hossain and S. Hatch and Liu, \{H. Y.\} and Sellers, \{I. R.\}",
note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 ; Conference date: 05-06-2016 Through 10-06-2016",
year = "2016",
month = nov,
day = "18",
doi = "10.1109/PVSC.2016.7749397",
language = "English",
series = "Conference Record of the IEEE Photovoltaic Specialists Conference",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "5--8",
booktitle = "2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016",
address = "United States",
}