Intracavity stimulated Raman scattering in Nd:LSB-Cr:YAG microchip lasers

L. E. Batay; S. V. Voitikov; A. S. Grabtchikov; M. B. Danailov; A. A. Demidovich; A. N. Kuzmin; V. A. Lisinetskii; V. A. Orlovich

doi:10.1117/12.610483

Intracavity stimulated Raman scattering in Nd:LSB-Cr:YAG microchip lasers

L. E. Batay
, S. V. Voitikov
, A. S. Grabtchikov
, M. B. Danailov
, A. A. Demidovich
, A. N. Kuzmin
, V. A. Lisinetskii
, V. A. Orlovich

Institute for Lasers Photonics and Biophotonics

Belarus Academy of Sciences
Sincrotrone Trieste

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

The results of further detailed investigations of passive Q-switch Raman microchip lasers based on Nd:LSB crystal with Ba(NO₃)₂, BaWO₄ and KGd(WO₄)₂ crystals as intracavity Raman media are presented. It is shown that intracavity stimulated Raman scattering (SRS) in microchip lasers is very simple and efficient method for generation of high power pulses with duration comparable to ones reaching under more technically complicated mode-locking regime. Modeling output energy parameters and emission kinetics of Nd:LSB microchip laser with intracavity SRS on the base of enhanced theoretical model of Q-switch Raman microchip lasers operation taking into account cross-section intensity distribution of pump, laser and Stokes modes, thermalization processes of activator ions on upper and lower multiplet levels and features of saturable absorber intracavity bleaching at spatially nonhomogeneous laser mode has shown good agreement with experimental results.

Original language	English
Article number	11
Pages (from-to)	88-97
Number of pages	10
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	5447
DOIs	https://doi.org/10.1117/12.610483
State	Published - 2004
Event	Lasers for Measurements and Information Transfer 2004 - St. Petersburg, Russian Federation Duration: Jun 23 2004 → Jun 25 2004

Keywords

Dynamics modeling
Laser dynamics
Microchip laser
Passive Q-switch
Stimulated raman scattering

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title = "Intracavity stimulated Raman scattering in Nd:LSB-Cr:YAG microchip lasers",

abstract = "The results of further detailed investigations of passive Q-switch Raman microchip lasers based on Nd:LSB crystal with Ba(NO3)2, BaWO4 and KGd(WO4)2 crystals as intracavity Raman media are presented. It is shown that intracavity stimulated Raman scattering (SRS) in microchip lasers is very simple and efficient method for generation of high power pulses with duration comparable to ones reaching under more technically complicated mode-locking regime. Modeling output energy parameters and emission kinetics of Nd:LSB microchip laser with intracavity SRS on the base of enhanced theoretical model of Q-switch Raman microchip lasers operation taking into account cross-section intensity distribution of pump, laser and Stokes modes, thermalization processes of activator ions on upper and lower multiplet levels and features of saturable absorber intracavity bleaching at spatially nonhomogeneous laser mode has shown good agreement with experimental results.",

keywords = "Dynamics modeling, Laser dynamics, Microchip laser, Passive Q-switch, Stimulated raman scattering",

author = "Batay, \{L. E.\} and Voitikov, \{S. V.\} and Grabtchikov, \{A. S.\} and Danailov, \{M. B.\} and Demidovich, \{A. A.\} and Kuzmin, \{A. N.\} and Lisinetskii, \{V. A.\} and Orlovich, \{V. A.\}",

year = "2004",

doi = "10.1117/12.610483",

language = "English",

volume = "5447",

pages = "88--97",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "Lasers for Measurements and Information Transfer 2004 ; Conference date: 23-06-2004 Through 25-06-2004",

}

TY - JOUR

T1 - Intracavity stimulated Raman scattering in Nd:LSB-Cr:YAG microchip lasers

AU - Batay, L. E.

AU - Voitikov, S. V.

AU - Grabtchikov, A. S.

AU - Danailov, M. B.

AU - Demidovich, A. A.

AU - Kuzmin, A. N.

AU - Lisinetskii, V. A.

AU - Orlovich, V. A.

PY - 2004

Y1 - 2004

N2 - The results of further detailed investigations of passive Q-switch Raman microchip lasers based on Nd:LSB crystal with Ba(NO3)2, BaWO4 and KGd(WO4)2 crystals as intracavity Raman media are presented. It is shown that intracavity stimulated Raman scattering (SRS) in microchip lasers is very simple and efficient method for generation of high power pulses with duration comparable to ones reaching under more technically complicated mode-locking regime. Modeling output energy parameters and emission kinetics of Nd:LSB microchip laser with intracavity SRS on the base of enhanced theoretical model of Q-switch Raman microchip lasers operation taking into account cross-section intensity distribution of pump, laser and Stokes modes, thermalization processes of activator ions on upper and lower multiplet levels and features of saturable absorber intracavity bleaching at spatially nonhomogeneous laser mode has shown good agreement with experimental results.

AB - The results of further detailed investigations of passive Q-switch Raman microchip lasers based on Nd:LSB crystal with Ba(NO3)2, BaWO4 and KGd(WO4)2 crystals as intracavity Raman media are presented. It is shown that intracavity stimulated Raman scattering (SRS) in microchip lasers is very simple and efficient method for generation of high power pulses with duration comparable to ones reaching under more technically complicated mode-locking regime. Modeling output energy parameters and emission kinetics of Nd:LSB microchip laser with intracavity SRS on the base of enhanced theoretical model of Q-switch Raman microchip lasers operation taking into account cross-section intensity distribution of pump, laser and Stokes modes, thermalization processes of activator ions on upper and lower multiplet levels and features of saturable absorber intracavity bleaching at spatially nonhomogeneous laser mode has shown good agreement with experimental results.

KW - Dynamics modeling

KW - Laser dynamics

KW - Microchip laser

KW - Passive Q-switch

KW - Stimulated raman scattering

UR - https://www.scopus.com/pages/publications/19844377586

U2 - 10.1117/12.610483

DO - 10.1117/12.610483

M3 - Conference article

AN - SCOPUS:19844377586

SN - 0277-786X

VL - 5447

SP - 88

EP - 97

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

M1 - 11

T2 - Lasers for Measurements and Information Transfer 2004

Y2 - 23 June 2004 through 25 June 2004

ER -

Intracavity stimulated Raman scattering in Nd:LSB-Cr:YAG microchip lasers

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Keywords

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