Intersubband transitions and subband-landau-level coupling in a vicinally oriented si n-type inversion layer

Intersubband transitions on (118) Si n-type metal-oxide-semiconductor field-effect transistors have been observed with light propagation parallel to the magnetic field and field normal to the sample surface. In this geometry, coupling of the cyclotron motion to the intersubband transition dipole results from the anisotropic energy surfaces. Intersubband transition energies are unaffected by the magnetic field for subband transition energies much greater than cyclotron resonance. When the two transitions approach each other, large subband-Landau-level coupling is observed and is explained by a simple Drude model calculation.