Internal transitions of charged excitons in AlGaAs/GaAs lateral fluctuation quantum dots

C. J. Meining; V. R. Whiteside; B. D. Mccombe; H. A. Nickel; A. Petrou; J. G. Tischler; A. S. Bracker; D. Gammon; A. B. Dzyubenko

doi:10.12693/APhysPolA.106.383

Internal transitions of charged excitons in AlGaAs/GaAs lateral fluctuation quantum dots

C. J. Meining
, V. R. Whiteside
, B. D. Mccombe
, H. A. Nickel
, A. Petrou
, J. G. Tischler
, A. S. Bracker
, D. Gammon
, A. B. Dzyubenko

Physics

SUNY Buffalo
Naval Research Laboratory
California State University Bakersfield

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

The internal transitions of charged excitons in AlGaAs/ GaAs lateral fluctuation quantum dots were investigated. The magneto-photoluminescence (MPL) and optically detected resonance (ODR) spectra of GaAs/Al_0.3Ga _0.7As quantum well samples in magnetic fields up to 10 T were also investigated. Internal bound-to-bound triplet transitions, which was due to breaking of magnetic transitional invariance, in the widest wells of the sample with lateral potential fluctuations were observed. It was found that the ODR signals in the narrowest wells were due to internal transitions of highly correlated negatively charged excitons weakly confined in the lateral dots.

Original language	English
Pages (from-to)	383-393
Number of pages	11
Journal	Acta Physica Polonica A
Volume	106
Issue number	3
DOIs	https://doi.org/10.12693/APhysPolA.106.383
State	Published - Sep 2004

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@article{d1dff3fb326f43538b86c724ff0b27dc,

title = "Internal transitions of charged excitons in AlGaAs/GaAs lateral fluctuation quantum dots",

abstract = "The internal transitions of charged excitons in AlGaAs/ GaAs lateral fluctuation quantum dots were investigated. The magneto-photoluminescence (MPL) and optically detected resonance (ODR) spectra of GaAs/Al0.3Ga 0.7As quantum well samples in magnetic fields up to 10 T were also investigated. Internal bound-to-bound triplet transitions, which was due to breaking of magnetic transitional invariance, in the widest wells of the sample with lateral potential fluctuations were observed. It was found that the ODR signals in the narrowest wells were due to internal transitions of highly correlated negatively charged excitons weakly confined in the lateral dots.",

author = "Meining, \{C. J.\} and Whiteside, \{V. R.\} and Mccombe, \{B. D.\} and Nickel, \{H. A.\} and A. Petrou and Tischler, \{J. G.\} and Bracker, \{A. S.\} and D. Gammon and Dzyubenko, \{A. B.\}",

year = "2004",

month = sep,

doi = "10.12693/APhysPolA.106.383",

language = "English",

volume = "106",

pages = "383--393",

journal = "Acta Physica Polonica A",

issn = "0587-4246",

publisher = "Polska Akademia Nauk",

number = "3",

}

TY - JOUR

T1 - Internal transitions of charged excitons in AlGaAs/GaAs lateral fluctuation quantum dots

AU - Meining, C. J.

AU - Whiteside, V. R.

AU - Mccombe, B. D.

AU - Nickel, H. A.

AU - Petrou, A.

AU - Tischler, J. G.

AU - Bracker, A. S.

AU - Gammon, D.

AU - Dzyubenko, A. B.

PY - 2004/9

Y1 - 2004/9

N2 - The internal transitions of charged excitons in AlGaAs/ GaAs lateral fluctuation quantum dots were investigated. The magneto-photoluminescence (MPL) and optically detected resonance (ODR) spectra of GaAs/Al0.3Ga 0.7As quantum well samples in magnetic fields up to 10 T were also investigated. Internal bound-to-bound triplet transitions, which was due to breaking of magnetic transitional invariance, in the widest wells of the sample with lateral potential fluctuations were observed. It was found that the ODR signals in the narrowest wells were due to internal transitions of highly correlated negatively charged excitons weakly confined in the lateral dots.

AB - The internal transitions of charged excitons in AlGaAs/ GaAs lateral fluctuation quantum dots were investigated. The magneto-photoluminescence (MPL) and optically detected resonance (ODR) spectra of GaAs/Al0.3Ga 0.7As quantum well samples in magnetic fields up to 10 T were also investigated. Internal bound-to-bound triplet transitions, which was due to breaking of magnetic transitional invariance, in the widest wells of the sample with lateral potential fluctuations were observed. It was found that the ODR signals in the narrowest wells were due to internal transitions of highly correlated negatively charged excitons weakly confined in the lateral dots.

UR - https://www.scopus.com/pages/publications/7044253589

U2 - 10.12693/APhysPolA.106.383

DO - 10.12693/APhysPolA.106.383

M3 - Article

AN - SCOPUS:7044253589

SN - 0587-4246

VL - 106

SP - 383

EP - 393

JO - Acta Physica Polonica A

JF - Acta Physica Polonica A

IS - 3

ER -

Internal transitions of charged excitons in AlGaAs/GaAs lateral fluctuation quantum dots

Abstract

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