Interface structures of CoSi2 and MoSi2 epitaxies on silicon

Sharath Dakshinamurthy; Krishna Rajan

doi:10.1117/12.636955

Interface structures of CoSi₂ and MoSi₂ epitaxies on silicon

Sharath Dakshinamurthy
, Krishna Rajan

Department of Materials Design and Innovation

Rensselaer Polytechnic Institute

Research output: Contribution to journal › Conference article › peer-review

Abstract

The occurrence of the defect structures in heteroepitaxies can be attributed to some low energy configuration of atoms at the interface, which also result in specific orientation relationships between the epilayer and the substrate. Here, we apply a generalized model to characterize the interfaces of CoSi₂ and MoSi₂ with silicon and compare the predictions of the models with TEM observations of the defect structure.

Original language	English
Pages (from-to)	112-115
Number of pages	4
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	1622
DOIs	https://doi.org/10.1117/12.636955
State	Published - 1991
Event	Emerging Optoelectronic Technologies 1991 - Bangalore, India Duration: Dec 16 1991 → …

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10.1117/12.636955

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title = "Interface structures of CoSi2 and MoSi2 epitaxies on silicon",

abstract = "The occurrence of the defect structures in heteroepitaxies can be attributed to some low energy configuration of atoms at the interface, which also result in specific orientation relationships between the epilayer and the substrate. Here, we apply a generalized model to characterize the interfaces of CoSi2 and MoSi2 with silicon and compare the predictions of the models with TEM observations of the defect structure.",

author = "Sharath Dakshinamurthy and Krishna Rajan",

year = "1991",

doi = "10.1117/12.636955",

language = "English",

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pages = "112--115",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

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TY - JOUR

T1 - Interface structures of CoSi2 and MoSi2 epitaxies on silicon

AU - Dakshinamurthy, Sharath

AU - Rajan, Krishna

PY - 1991

Y1 - 1991

N2 - The occurrence of the defect structures in heteroepitaxies can be attributed to some low energy configuration of atoms at the interface, which also result in specific orientation relationships between the epilayer and the substrate. Here, we apply a generalized model to characterize the interfaces of CoSi2 and MoSi2 with silicon and compare the predictions of the models with TEM observations of the defect structure.

AB - The occurrence of the defect structures in heteroepitaxies can be attributed to some low energy configuration of atoms at the interface, which also result in specific orientation relationships between the epilayer and the substrate. Here, we apply a generalized model to characterize the interfaces of CoSi2 and MoSi2 with silicon and compare the predictions of the models with TEM observations of the defect structure.

UR - https://www.scopus.com/pages/publications/85075630276

U2 - 10.1117/12.636955

DO - 10.1117/12.636955

M3 - Conference article

AN - SCOPUS:85075630276

SN - 0277-786X

VL - 1622

SP - 112

EP - 115

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Emerging Optoelectronic Technologies 1991

Y2 - 16 December 1991

ER -

Interface structures of CoSi₂ and MoSi₂ epitaxies on silicon

Abstract

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